Step structure of arsenic-terminated vicinal Ge (100)

Gan, Shupan; Li, L.; Begarney, M. J.; Law, D. C.; Han, B.-K.; Hicks, Robert F.

doi:10.1063/1.369176

Cited by 16 publications

(13 citation statements)

References 15 publications

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“…For miscut orientations near (100) and (111), we find (100) and (111) terraces [1,2], in complete agreement with previously published results [3][4][5][6][7][8]. Prior to this study, little was known about the higher-angle miscuts, however.…”

Section: Introductionsupporting

confidence: 80%

“…Our results for AsH 3 exposure are quite different than for PH 3 exposure. Most significantly, we find that AsH 3 etches Ge, whereas PH 3 does not [1].…”

Section: Introductioncontrasting

confidence: 53%

“…The AsH 3 :Ge(100) surface consists of a simple 2 × 1 reconstruction in which As dimers terminate the bulk Ge lattice [1,2], as has been observed previously for tertiarybutylarsine-exposed Ge in an MOCVD environment [3] and for As 2 -and As 4 -exposed Ge in a UHV environment [4][5][6].…”

Section: (A) Stable Ash 3 :Ge(mnn) Surfacesmentioning

confidence: 84%

“…As an example, in Figure 5 we show an As/Ge(511) surface that is only partially facetted toward (100) and (11,3,3). In addition to these two stable facetting directions, there are obvious (511) regions and a variety of less obvious intermediate facets.…”

Section: (B) Unstable Ash 3 :Ge(mnn) Surfacesmentioning

confidence: 99%

“…In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (100), (11,3,3), (955), and (111). …”

mentioning

confidence: 99%

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A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces

McMahon

Olson

2001

Journal of Crystal Growth

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Ge(mnn) surfaces between (100) and (111) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (100), (11,3,3), (955), and (111).

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Section: Introductionsupporting

confidence: 80%

“…Our results for AsH 3 exposure are quite different than for PH 3 exposure. Most significantly, we find that AsH 3 etches Ge, whereas PH 3 does not [1].…”

Section: Introductioncontrasting

confidence: 53%

Section: (A) Stable Ash 3 :Ge(mnn) Surfacesmentioning

confidence: 84%

Section: (B) Unstable Ash 3 :Ge(mnn) Surfacesmentioning

confidence: 99%

mentioning

confidence: 99%

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A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces

McMahon

Olson

2001

Journal of Crystal Growth

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In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

Orejuela,

García‐Tabares,

Rey‐Stolle

et al. 2024

Adv Elect Materials

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Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics. Its combination with III‐V compound semiconductors through epitaxial growth by metal‐organic vapor phase epitaxy (MOVPE) is instrumental and thus, the comprehension of the sequential stages in such epitaxial processes is of great importance. During the deposition of GaAs on p‐type Ge, the formation of n/p junctions occurs when As diffuses into Ge. It is found that this formation begins in the so‐called AsH3 preexposure where Ge substrate is first exposed to AsH3. Also important is the fact that both free carrier profiles and As profiles indicate that prolonged AsH3 preexposure times lead to deeper diffusion depths for the same process time. This effect is concomitant with the degradation of the Ge surface morphology, characterized by higher roughness as the AsH3 preexposure duration is extended. Unlike ion‐implanted As in Ge, which shows a quadratic dependent diffusivity, this MOVPE investigation using AsH3 indicates a linear relationship, consistent with Takenaka et al.’s MOVPE study using TBAs. The analysis of As profiles alongside simulations, with and without subsequent GaAs epitaxy, suggests the generation of Ge vacancies during the process, contributing to deeper As diffusion.

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Step structure of arsenic-terminated vicinal Ge (100)

Cited by 16 publications

References 15 publications

A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces

A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures

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