Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
V. Orejuela,
E. García‐Tabares,
I. Rey‐Stolle
et al.
Abstract:Germanium is reemerging as a prominent material in the semiconductor field, particularly for electronic applications, photonics, photovoltaics, and thermophotovoltaics. Its combination with III‐V compound semiconductors through epitaxial growth by metal‐organic vapor phase epitaxy (MOVPE) is instrumental and thus, the comprehension of the sequential stages in such epitaxial processes is of great importance. During the deposition of GaAs on p‐type Ge, the formation of n/p junctions occurs when As diffuses into … Show more
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