Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

Kallinger, Birgit; Berwian, Patrick; Friеdrich, J.; Thomas, Bernd

doi:10.1016/j.jcrysgro.2013.07.024

Cited by 21 publications

(20 citation statements)

References 13 publications

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“…We have recently shown improved epilayer morphology using standard chemistry , in comparison to previous studies where hydrochloric acid has been added or trichlorosilane has been used as Si source with the aim of improving surface morphology. Epilayers on 2° off‐cut substrates have been grown with standard chemistry earlier , however without emphasis on improving the epilayer surface. In we also showed that an in situ etching is preferably done in pure hydrogen environment rather than in hydrogen and silane mixture, in order to reduce the surface roughness and density of surface morphological defects.…”

Section: Introductionmentioning

confidence: 99%

In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates

Lilja

Ul-Hassan

Janzén

et al. 2015

Physica Status Solidi (b)

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Phone: þ46 13 286 745, Fax: þ46 13 137 568 4H-SiC epilayers were grown on 28 off-cut substrates using standard silane/propane chemistry, with the aim of characterizing in-grown stacking faults. The stacking faults were analyzed with low temperature photoluminescence spectroscopy, room temperature photoluminescence mappings, room temperature cathodoluminescence and synchrotron white beam X-ray topography. At least three different types of ingrown stacking faults were observed, including double Shockley stacking faults, triple Shockley stacking faults and bar-shaped stacking faults. Those stacking faults are all previously found in 48 and 88 off-cut epilayers; however, the geometrical size is larger in epilayers grown on 28 off-cut substrates due to lower off-cut angle. The stacking faults were formed close to the epilayer/substrate interface during the epitaxial growth.

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Section: Introductionmentioning

confidence: 99%

In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates

Lilja

Ul-Hassan

Janzén

et al. 2015

Physica Status Solidi (b)

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“…The influence of the C/Si ratio on the epilayers' BPD density was investigated in series B-D and F-H. For all growth series, a similar trend of the BPD density in dependence of the C/Si ratio was found: The BPD density shows a local minimum at C/Si % 1 and slightly higher BPD densities at lower and higher C/Si ratios. It was already reported 5,17 that step-bunching becomes more severe for increasing C/Si ratio, i.e., there might exist an optimum step geometry at C/Si % 1 for BPD-TED conversion.…”

Section: A Determination Of the Main Influencing Factors On The Bpd mentioning

confidence: 93%

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Kallinger

Polster

Berwian

et al. 2013

Journal of Applied Physics

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4H-SiC homoepitaxial layers free of basal plane dislocations (BPDs) are urgently needed to overcome the so-called bipolar degradation of high-voltage devices. BPDs being present in substrates are able to either propagate to the epilayer or convert to harmless threading edge dislocations (TEDs) in the epilayer. The model by Klapper predicts the conversion of BPDs to TEDs to be more efficient for growth on vicinal substrates with low off-cut angle. This paper aims to verify the model by Klapper by an extensive variation of epitaxial growth parameters and the substrates' off-cut. It is shown that the off-cut angle is the key parameter for growth of BPD-free epilayers. Furthermore, it is shown that the model also describes adequately the behavior of different types of TEDs, i.e., TED II and TED III dislocations, during epitaxial growth. Therefore, the model by Klapper is verified successfully for 4H-SiC homoepitaxial growth on vicinal substrates. V C 2013 AIP Publishing LLC. [http://dx

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“…Based on this knowledge and on the long‐standing experience of CGL in GaN epitaxy, as well as crystal growth and crystal defects in general, IISB took a quick start in developing the SiC epitaxy process. In the beginning the influence of the epi‐parameters like growth temperature, C/Si ratio, doping atoms and their concentrations, and the off‐cut angle of the substrate on the formation of dislocations in the SiC epilayer and on the surface morphology were the focus of the investigations . The main target was the improvement of the observed degradation of bipolar SiC devices with high blocking voltages due to a so‐called “drift of the forward voltage” caused by basal plane dislocations (BPDs) in the epilayer.…”

Section: Development Of Wide Bandgap Semiconductors (Sic Gan Aln)—cmentioning

confidence: 99%

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

Friеdrich

Müller

2019

Crystal Research and Technology

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This article describes the historic development of the Erlangen Crystal GrowthLaboratory CGL from its beginnings in 1974 at the chair of Materials of Electrical Engineering (Department of Material Science) of the University of Erlangen-Nuremberg until its current status as a large department "Materials" of the Erlangen Fraunhofer-Institute for Integrated Systems and Device Technology. Essential developments and scientific achievements in the various fields of crystal growth and epitaxy are presented from the early period until today.

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Step-controlled homoepitaxial growth of 4H–SiC on vicinal substrates

Cited by 21 publications

References 13 publications

In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates

In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four Decades

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