Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate

Miyasaka, Akira; Norimatsu, Jun; Fukada, Keisuke; Tajima, Yutaka; Muto, Daisuke; Kimura, Yusuke; Odawara, M.; Okano, Takayuki; Momose, Kenji; Osawa, Yuji; Osawa, Hiroshi; Sato, Takayuki

doi:10.4028/www.scientific.net/msf.740-742.197

Cited by 14 publications

(13 citation statements)

References 11 publications

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“…In the last two years few researchers showed results on 150 mm 4 • off SiC 4H epitaxy: in 2011, an American research group showed the first results, 24 all in all the results were very promising, only withinwafer doping uniformity showed a high value. In 2012, a Japanese group showed free step bunching surface on their 150 mm SiC-4H epitaxy, 25 but again within-wafer doping uniformity showed high values.…”

Section: Preliminary Results On 150 MM Sic-4h Epitaxymentioning

confidence: 99%

Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

Mauceri¹,

Pecora²,

Litrico³

et al. 2013

ECS J. Solid State Sci. Technol.

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The latest results on 100 mm 2° off and 150 mm SiC-4H epitaxial process using chlorinated chemistry are illustrated in this paper. On 2° off substrates a reduced step-bunching epi surface with a roughness of <0, 27 nm was achieved and the reduction of SSSF and BSSF was also noticed. SiC 150 mm epitaxy process was demonstrated showing an epi thickness dispersion of ± 0.9% and a doping dispersion of ± 9.1%.

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Section: Preliminary Results On 150 MM Sic-4h Epitaxymentioning

confidence: 99%

Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

Mauceri¹,

Pecora²,

Litrico³

et al. 2013

ECS J. Solid State Sci. Technol.

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“…An effective way to reduce SiC device cost is to increase SiC wafer size. Indeed, the development of 150 mm 4H-SiC materials, including the epitaxial growth, has gained a lot of attentions [2,3]. The larger size 150 mm SiC epi-wafer is particularly attractive because it benefits from the existing 150 mm silicon fabrication lines, making it possible to substantially reduce the capital investment for SiC device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor

Sun

Ge²,

Kang

et al. 2018

MSF

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In this work we report the latest epitaxial growth of 150 mm 4H-SiC on 4° off-axis substrates by a commercial hot-wall reactor. A statistical analysis of more than 300 runs with an epi thickness range of 6μm~15μm shows that the average uniformities of the thickness and the doping concentration are 1.34% (sigma/mean) and 3.90% (sigma/mean), respectively, and the average 2 mm x 2 mm projected device yield is 97.79%. The growths of ~60 μm-thick 150 mm 4H-SiC epitaxial layers have also been carried out. The repeatability of this system for thick epitaxial layer growth has been verified, showing a run-to-run uniformity similar to that of the thin wafers. These results of 150 mm 4H-SiC epitaxial growths indicate that this comercial hot-wall reactor has the potential for mass production of large diameter 4H-SiC epitaxial wafers.

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“…15,16) Recently, the density of those surface defects and stepbunching has been gradually decreasing with an improvement of the epitaxial growth conditions. 17,18) As a consequence, large-area surface defects such as obtuse triangular defects 19,20) and trapezoid-shaped defects 21) are conspicuous and become one of the dominant surface defects.…”

Section: Introductionmentioning

confidence: 99%

Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers

Ishiyama¹,

Yamada²,

Sako³

et al. 2014

Jpn. J. Appl. Phys.

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The reliability of the gate oxide on large-area surface defects (trapezoid-shaped and obtuse triangular defects) in 4H-SiC epitaxial wafers is discussed. Time-dependent dielectric breakdown measurements revealed that a reduction in charge-to-breakdown (Q bd) occurred at a MOS capacitor including the downstream line of those defects. The deterioration of Q bd was at the same level in trapezoid-shaped defects and obtuse triangular defects. A cross-sectional transmission electron microscope (TEM) image and the simulation of the electric field distribution for the MOS structure indicated that the local fluctuation of the oxide thickness and/or the roughness of the interface on the downstream lines caused the degradation of the reliability of the MOS capacitors.

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Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate

Cited by 14 publications

References 11 publications

Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor

Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers

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