2004
DOI: 10.1016/j.tsf.2004.05.139
|View full text |Cite
|
Sign up to set email alerts
|

STEM study of interfacial reaction at HfxAl1−xOy/Si interfaces

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
6
0

Year Published

2006
2006
2020
2020

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(7 citation statements)
references
References 12 publications
1
6
0
Order By: Relevance
“…In the case of the films annealed by RTP, although Dai et al [34] reports similar results for Al diffusion, the roughness of the film/substrate interface of the films here studied are lower, i.e, the interface was sharp. This difference could be attributed to the deposition method because in [34] the authors use the pulsed-laser deposition method. Although Hf is inward the silicon at some degree (see Fig.…”
Section: Phase Separation Analysis By Gixrdsupporting
confidence: 70%
See 3 more Smart Citations
“…In the case of the films annealed by RTP, although Dai et al [34] reports similar results for Al diffusion, the roughness of the film/substrate interface of the films here studied are lower, i.e, the interface was sharp. This difference could be attributed to the deposition method because in [34] the authors use the pulsed-laser deposition method. Although Hf is inward the silicon at some degree (see Fig.…”
Section: Phase Separation Analysis By Gixrdsupporting
confidence: 70%
“…According to these results, during the thermal treatment of the films, at least four layers arise due to the interdiffusion of the different chemical elements from the dielectric layer toward the substrate and vice-versa [1,33]. In this sense, Dai et al [34], report that, in Hf x-Al 1-x O y deposited on Si substrate, interlayer between film and silicon is formed by hafnium silicide compound, which is linked to the larger diffusion of Hf toward the substrate. The formation of this interlayer would be accompanied by the formation of a rougher interface [34].…”
Section: A Morphological Analysis By X-ray Reflectometry (Xrr)mentioning
confidence: 99%
See 2 more Smart Citations
“…We carried out atomic compositional analysis of the nanoparticles by examining the composition of individual particles. It’s known that in the high-angle annular dark field (HAADF) image, the elements with higher atomic number will have brighter contrast compared to the light elements with lower atomic number [ 15 ]. Therefore, it’s reasonable to assume that for the isolated FePt NPs, the brighter spots are corresponding to the Pt-rich particles while the darker spots are the Fe-rich ones, since Fe has a significantly lower atomic number than Pt.…”
Section: Resultsmentioning
confidence: 99%