The
influence of alkyl side-chain length [C
n
H2n+1 (A), where n =
6 (hexyl), 8 (octyl), 12 (dodecyl)] and thermal annealing (TA)
and the definite roles of these in the quantity and quality of π-stacked
crystallinity and edge-on orientated (EO) ordering of spin-coated
poly(3-alkylthiophene) [P3AT] thin films, which are of massive significance
in their optoelectronic properties, were investigated using complementary
optical absorption spectroscopy and X-ray reflectivity (XR) techniques.
The energy-band diagram, corresponding to the vibronic levels, obtained
from the optical absorption spectrum provides information about the
percentage, planarity, local order, and average conjugation length
of the crystalline aggregates, while the electron density profile
obtained from the XR provides unique information about the EO ordering
and its variation along the depth. A prominent EO ordering near the
substrate with a gradually decreased ordering toward the top surface
is observed in each film. An as-cast P3HT film of shorter side-chain
(having a natural nucleation tendency and rigidity) shows a slightly
higher crystallinity and weaker excitonic coupling, while as-cast
P3DDT film (having longer side-chain flexibility) shows a slightly
better EO ordering. After the TA, the planarity of the unfolded backbone
improves in each film; however, the effect is maximum in the P3DDT
film. The EO ordering also improves throughout the film (by a thermal
energy-induced reorientation of crystallites) but more toward the
top surface (by increasing the decay length), preserving the exponential
decay nature. The P3HT film (with the better initial crystallinity
and planarity) shows an appreciable improvement, while the P3DDT film
(where the crystallinity increases and crystallites have a better
reorientational ability) shows the maximum improvement in the EO ordering.
The improvement of the crystallinity (in quantity and quality) and
the EO ordering of P3AT in thin films (as active layers), especially
near the film–substrate interfaces, are of immense importance
for their better in-plane charge carrier mobility in a thin-film transistor.