Steady-state and transient photoconductivity in amorphous thin films of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>100</mml:mn><mml:mi

Kumar, Anjani; Goel, S.; Tripathi, S. K.

doi:10.1103/physrevb.38.13432

Cited by 28 publications

(7 citation statements)

References 16 publications

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“…This small systematic shift between the observed rigidity percolation threshold and the predicted one has been reported in amorphous Ge 100Àx Se x from the results of the steady state photoconductivity [17], Mo È ssbauer site intensity ratio [18], Raman scattering [19], molar volume [20] and X-ray spectroscopic studies [21]. It has also been noted in ternary Ge±As±Se [22] glasses.…”

Section: Resultssupporting

confidence: 71%

Atomic Density versus Average Coordination Number in Ge–In–Se Glasses

Saffarini

1999

phys. stat. sol. (b)

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The variation of the atomic density ϱ with the average coordination number Z for glasses belonging to the GexIn6Se94—x and GexIn12Se88—x families of the Ge–In–Se system is investigated. The ϱ— Z dependence displays broad maxima at Z values of 2.42 and 2.58 for families with 6 and 12 at% In, respectively. These maxima are ascribed to changes from a floppy to a rigid type network and from a two‐dimensional layered structure to a three‐dimensional network, respectively. The minima exhibited in the ϱ— Z dependence at Z = 2.63 for the In6 family and at Z = 2.71 for the In12 family, corresponding to the tie‐line compositions, are attributed to chemical ordering effects.

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Section: Resultssupporting

confidence: 71%

Atomic Density versus Average Coordination Number in Ge–In–Se Glasses

Saffarini

1999

phys. stat. sol. (b)

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“…The observed thresholds, marking the transition from floppy to rigid type networks, in the Ge-In-Se system (namely the minimum in V, at Z = 2.54 in the In, family and the change in slope in the V,-Z dependence at Z = 2.50 in the In,, family) are higher than the theoretical prediction of the model of Phillips and Thorpe. This systematic positive shift has been noted in amorphous Geloo-, Sex from the results of X-ray spectroscopic studies [21], steady-srate and transient photoconductivity [22], Raman scattering [23], Mijssbauer site intensity ratio [15], and molar volume [24]. It has also been reported in Ge-As-Te glasses from high-pressure resistivity measurements [6].…”

Section: >-mentioning

confidence: 74%

Rigidity Percolation and Chemical Ordering in Ge‐In‐Se Glasses

Saffarini¹,

Schlieper²

1995

Physica Status Solidi (b)

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The dependence of the mean atomic volume V, of chalcogenide glasses belonging to the Ge,In,Se,,-x and Ge,In,,Se,,~, families of the Ge-In-Se system, on the average coordination number Z is investigated. The V,-Z plots for both families display maxima at Z = 2.75 and 2.83 corresponding to the tie-line composition in In, and In,, families, respectively. The V,-Z dependence for the In, family exhibits a minimum at Z = 2.54 and a broad local maximum at Z = 2.67, and that of the In,, family shows a marked change in slope at Z = 2.50. These results are discussed in the framework of the chemically ordered covalent network model, Tanaka's model of topological transition, and the Phillips-Thorpe model of rigidity percolation.

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“…The crystallization of the amorphous material into a single phase is the foremost requirement among them so that the material can qualify as a direct overwrites media [2][3][4][5]. The other material requirements include low melting point, high activation energy of crystallization, high absorption at the writing wavelength, a high optical contrast at the reading wavelength and stability of the optical properties under normal environmental conditions.…”

Section: Introductionmentioning

confidence: 99%