Status of the Center for Advanced Microstructures and Devices (CAMD)-2001

Morikawa, Eizi; Scott, John D.; Goettert, Jost; Aigeldinger, Georg; Kumar, C. S. S. R.; Craft, B.; Sprunger, P. T.; Tittsworth, R. C.; Hormes, F. J.

doi:10.1063/1.1425391

Cited by 10 publications

(8 citation statements)

References 5 publications

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“…The Li 2 B 4 O 7 :RE extended X-ray absorption fine structure (EXAFS) spectra were measured using a double crystal monochromator of Lemonnier type [56] at the DCM and WDCM beamlines located at the Center for Advanced Microstructures and Devices (CAMD) [57][58][59]. Due to the thickness of the glass samples and low dopant concentrations (nominally 1%), the absorption spectra were measured in fluorescence mode and the spectra analyzed without self-absorption corrections.…”

Section: Methodsmentioning

confidence: 99%

Rare earth dopant (Nd, Gd, Dy, and Er) hybridization in lithium tetraborate

et al. 2014

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The four dopants (Nd, Gd, Dy, and Er) substitutionally occupy the Li + sites in lithium tetraborate (Li 2 B 4 O 7 : RE) glasses as determined by analysis of the extended X-ray absorption fine structure. The dopants are coordinated by 6-8 oxygen at a distance of 2.3 to 2.5 Å, depending on the rare earth. The inverse relationship between the RE-O coordination distance and rare earth (RE) atomic number is consistent with the expected lanthanide atomic radial contraction with increased atomic number. Through analysis of the X-ray absorption near edge structure, the rare earth dopants adopt the RE 3+ valence state. There are indications of strong rare earth 5d hybridization with the trigonal and tetrahedral formations of BO 3 and BO 4 based on the determination of the rare earth substitutional Li + site occupancy from the X-ray absorption near edge structure data. The local oxygen disorder around the RE 3+ luminescence centers evident in the structural determination of the various glasses, and the hybridization of the RE 3+ dopants with the host may contribute to the asymmetry evident in the luminescence emission spectral lines. The luminescence emission spectra are indeed characteristic of the expected f-to-f transitions; however, there is an observed asymmetry in some emission lines.

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Section: Methodsmentioning

confidence: 99%

Rare earth dopant (Nd, Gd, Dy, and Er) hybridization in lithium tetraborate

et al. 2014

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“…The IPES was limited by an instrumental line width of approximately 400 meV, as described elsewhere [20, 21]. Key to this work, however, are the angle resolved photoemission spectroscopy (ARPES) measurements that employed plane polarized synchrotron radiation dispersed by a 3m toroidal grating monochromator [26, 27], at the Center for Advanced Microstructures and Devices (CAMD) [28–30]. The measurements were made in a UHV chamber employing a hemispherical electron analyzer with an angular acceptance of ±1°, as described elsewhere [26, 27].…”

Section: Methodsmentioning

confidence: 99%

Approaching an organic semimetal: Electron pockets at the Fermi level for a p‐benzoquinonemonoimine zwitterion

Rosa

Velev

Zhang

et al. 2012

Physica Status Solidi (b)

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There is compelling evidence of electron pockets, at the Fermi level, in the band structure for an organic zwitterion molecule of the p-benzoquinonemonoimine type. The electronic structure of the zwitterion molecular film has a definite, although small, density of states evident at the Fermi level as well as a nonzero inner potential and thus is very different from a true insulator. In spite of a small Brillouin zone, significant band width is observed in the intermolecular band dispersion. The results demonstrate that Bloch's theorem applies to the wave vector dependence of the electronic band structure formed from the molecular orbitals of adjacent molecules in a molecular thin film of a p-benzoquinonemonoimine type zwitterion.

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“…The photoemission experiments were conducted on the 3 m TGM beamline [37] at the Center for Advanced Microstructures and Devices at Louisiana State University [38][39][40]. The beamline is equipped with a photoemission endstation with a 50 mm hemispherical electron energy analyzer, with a resolution of about 70 meV, as described elsewhere [37,41].…”

Section: Methodsmentioning

confidence: 99%

Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f 14 occupancy.

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Status of the Center for Advanced Microstructures and Devices (CAMD)-2001

Abstract: The current status of the Louisiana State University Center for Advanced Microstructures and Devices electron storage ring, beamlines, and the scientific program are described.

Cited by 10 publications

References 5 publications

Rare earth dopant (Nd, Gd, Dy, and Er) hybridization in lithium tetraborate

Rare earth dopant (Nd, Gd, Dy, and Er) hybridization in lithium tetraborate

Approaching an organic semimetal: Electron pockets at the Fermi level for a p‐benzoquinonemonoimine zwitterion

Resonant photoemission of rare earth doped GaN thin films

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