Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloys

Vydyanath, H. R.

doi:10.1007/bf02653085

Cited by 18 publications

(11 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Vydyanath 43 has argued that the Hg interstitial, Hg i , could be an important SR center but recognized that other defects, such as the Te Hg . , cannot be excluded.…”

Section: Despite the Correlation Between Lifetime And [V Hgmentioning

confidence: 99%

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Capper¹,

Maxey²,

Jones³

et al. 1999

Journal of Elec Materi

View full text Add to dashboard Cite

Low temperature thermal treatments of CdHgTe, normally in the presence of mercury vapor, are still used on both bulk samples and single and multi-layer epitaxial layers to modify or control the electrical properties. This paper reviews the recent literature reports in this area and develops the existing model to explain certain features of the p to n conversion process. A brief update on compositional interdiffusion at low temperatures is given which shows significant disagreement within literature values. In addition, the paper will describe and comment on some as yet unexplained results (interdiffusion and electrical behavior) following low temperature treatments in both liquid phase and metalorganic vapor phase epitaxial (LPE and MOVPE) layers.

show abstract

“…Vydyanath 43 has argued that the Hg interstitial, Hg i , could be an important SR center but recognized that other defects, such as the Te Hg . , cannot be excluded.…”

Section: Despite the Correlation Between Lifetime And [V Hgmentioning

confidence: 99%

Low temperature thermal annealing effects in bulk and epitaxial CdxHg1−xTe

Capper¹,

Maxey²,

Jones³

et al. 1999

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…This specific LIR architecture has been extensively described in previous papers " 27 The 256x256 CMOS readout circuit has a pixel charge capacity of7.9 pC in a pitch of 35 jtmx35tm. 6. Performances of256x256 MCT/Ge IRCMOS Several 256x256 HgCdTe/CdTe/Ge IRCMOS were hybridized and characterized to establish performance issues.…”

Section: Readout Circuitmentioning

confidence: 99%

256x256 HgCdTe MWIR array grown on Ge substrates

Zanatta

Luchier

Audebert

et al. 1998

Infrared Detectors and Focal Plane Arrays V

View full text Add to dashboard Cite

A 256 x 256 IRCMOS array with a 35 micron pitch operating at 77 K in the MWIR range, has been developed using HgCdTe and CdTe layers grown by Molecular Beam Epitaxy (MBE) on a germanium (Ge) heterosubstrate. The CdTe(21 1)B layer is first grown on a 2 inch diameter (2! 1) oriented Ge wafer with a smooth surface morphology and good crystalline quality. The HgCdTe(211)B layer is also grown by M.B.E. on this CdTe/Ge heterosubstrate with the same quality. The material characteristics are detailed. The 256 x 256 photodiode array is made using the standard LETI/LIR planar n-on-p ion implanted technology. At 80 K, photodiodes exhibited an RoA figure of merit higher than 106 Q2 for a cut-off wavelength of 4.8 urn. An NEDT of 6 mK at 80 K was also obtained on the IRCMOS. The electro-optical characteristics of the component are presented and we show that the 256 x 256 component performances using HgCdTe grown on Ge heterosubstrate are comparable for MWIR applications to those obtained on 256 x 256 component using HgCdTe grown on CdZnTe homosubstrate.

show abstract

“…Liquid-phase epitaxy (LPE) from solution is a convenient cost-effective growth technique for the preparation and study of ternary semiconductor compounds [1]. One of the main problems in LPE growth is thickness and compositional uniformity across the layer area.…”

Section: Introductionmentioning

confidence: 99%