Status of EUV reflectometry at PTB

Laubis, Christian; Barboutis, Annett; Biel, Martin; Buchholz, Christian J.; Dubrau, Benjamin; Fischer, Andreas; Hesse, Anne; Puls, Jana; Stadelhoff, Christian; Soltwisch, Victor; Scholze, Frank

doi:10.1117/12.2011529

Cited by 17 publications

(4 citation statements)

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“…Figure 8 shows the 6.x nm reflectivity (the first Bragg peak) of these multilayers, measured at PTB. 25 Both structures show a reflectivity gain of 1% absolute with respect to the La/B multilayer (without La passivation). Notably, the achieved reflectivity is the same for both structures within the 0.05 uncertainty of the measurements.…”

Section: La Surface Nitridation In Multilayersmentioning

confidence: 98%

Grazing-Incidence La/B-Based Multilayer Mirrors for 6.x nm Wavelength

Kuznetsov

Yakshin

Sturm

et al. 2019

j nanosci nanotechnol

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We studied a possibility of fabricating LaN/B grazing incidence multilayer mirrors for 6.x nm radiation at a relatively large angle of incidence (AOI = 77 off-normal). LaN/B multilayers with a periodicity of 15 nm were successfully fabricated. But when stored in air for one week they showed strong deterioration of the surface due to oxidation of the topmost LaN layers, even though the multilayer was capped with a thin B film. In a series of experiments with variable LaN thickness it was found that the B protective properties depend on the thickness of the underlying LaN layer. Based on these experiments a 15 nm LaN/La/B multilayer with a passivation layer of only 0.4 nm of LaN was fabricated, which did not show any deterioration of the surface within a testing period of half a year. An initial reflectivity of 74.5% at ≈6.66 nm, AOI = 77 off-normal was achieved, which was reduced by 0.5% absolute in half a year, due to contamination of the top B layer.

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Section: La Surface Nitridation In Multilayersmentioning

confidence: 98%

Grazing-Incidence La/B-Based Multilayer Mirrors for 6.x nm Wavelength

Kuznetsov

Yakshin

Sturm

et al. 2019

j nanosci nanotechnol

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“…The instrument is installed at the soft X-ray radiometry beamline in PTB's laboratories at the synchrotron radiation facility BESSY II in Berlin, 8,9 whose source is a bending magnet. The beamline provides monochromatic, s-polarized radiation in a photon energy range between 50 eV and 1800 eV with a relative bandwidth of better than 2 × 10 −3 .…”

Section: A Setup For Euv Scatterometry On Small Sample Areasmentioning

confidence: 99%

Pushing the boundaries of EUV scatterometry: reconstruction of complex nanostructures for next-generation transistor technology

Ciesielski

Lohr

Mertens

et al. 2023

Metrology, Inspection, and Process Control XXXVII

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EUV scatterometry can retrieve geometrical information from nanoscale grating structures through elastic scattering of EUV radiation and the evaluation of the diffraction intensities. Its geometry and energy range place it in between grazing incidence x-ray scattering (GISAXS) and optical critical dimension (OCD). PTB recently commissioned a new scatterometry setup for the EUV and soft x-ray region that can address sample areas below 100 × 100 μm size by using a comparably steep, grazing angle of incidence of up to 30°. At the same time, the full cone of exit angles of 30° can be detected such that also the higher orders can be recorded in scatterometry measurements. It has been commissioned at PTB’s monochromatic soft x-ray beamline at the synchrotron radiation facility BESSY II and can also be used for simultaneous x-ray fluorescence detection. Its great tunability and energy resolution allows to scan across absorption edges of the relevant semiconductor materials to increase the contrast between different materials. The nanoscale geometry of modern transistor designs features different materials and structure sizes in the single digit nanometer range. Using the information wealth of spectrally resolved scatterometry measurements from the new setup, we present data and first geometrical reconstructions of selected, complex, industry-relevant design studies. The geometrical reconstruction of these structures relies on precise measurements, modelling of the scattering process, and statistical data evaluation methods.

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“…PTB operates two beamlines for measurements in the EUV spectral region [3]. The EUV beamline [8] at the MLS [9] (5.5 nm to 48 nm) with the large reflectometer [10] for samples up to collector size with adjustable spot size from 0.1 mm x 0.1 mm to 4 mm x 4 mm is complemented by the soft X-ray beamline (from below 1 nm to 25 nm) at BESSY II, optimized for low beam divergence to facilitate scatter measurements [11] and equipped with an un-lubricated instrument for measurements with arbitrarily rotated plane of reflection.…”

Section: Instrumentationmentioning

confidence: 99%

Update on EUV radiometry at PTB

Laubis

Barboutis

Buchholz

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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The development of technology infrastructure for EUV Lithography (EUVL) still requires higher levels of technology readiness in many fields. A large number of new materials will need to be introduced. For example, development of EUV compatible pellicles to adopt an approved method from optical lithography for EUVL needs completely new thin membranes which have not been available before. To support these developments, PTB with its decades of experience [1] in EUV metrology [2] provides a wide range of actinic and non actinic measurements at in-band EUV wavelengths as well as out of band. Two dedicated, complimentary EUV beamlines [3] are available for radiometric [4,5] characterizations benefiting from small divergence or from adjustable spot size respectively. The wavelength range covered reaches from below 1 nm to 45 nm [6] for the EUV beamlines [5] to longer wavelengths if in addition the VUV beamline is employed. The standard spot size is 1 mm by 1 mm with an option to go as low as 0.1 mm to 0.1 mm. A separate beamline offers an exposure setup. Exposure power levels of 20 W/cm 2 have been employed in the past, lower fluencies are available by attenuation or out of focus exposure. Owing to a differential pumping stage, the sample can be held under defined gas conditions during exposure. We present an updated overview on our instrumentation and analysis capabilities for EUV metrology and provide data for illustration.

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Status of EUV reflectometry at PTB

Cited by 17 publications

References 0 publications

Grazing-Incidence La/B-Based Multilayer Mirrors for 6.x nm Wavelength

Grazing-Incidence La/B-Based Multilayer Mirrors for 6.x nm Wavelength

Pushing the boundaries of EUV scatterometry: reconstruction of complex nanostructures for next-generation transistor technology

Update on EUV radiometry at PTB

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