Statistics of the Recombinations of Holes and Electrons

Shockley, W.; Read, W. T.

doi:10.1103/physrev.87.835

Cited by 5,833 publications

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“…Because of this, their microscopic anisotropy is reflected by the ESR as well as EDMR spectra as shown repeatedly in the literature [17,18]. First pEDMR studies at the P b -center have been carried out recently by Friedrich et al [18] which revealed that charge carrier trapping and recombination can take place without the presence of additional shallow trapping centers through a two step trapping/readjustment direct capture process that had been described theoretically first by Shockley and Read [19] and later Rong et al [20].…”

Section: A Pedmr Experiments With P B -Centersmentioning

confidence: 99%

The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

Boehme

Lips

2006

Physica B: Condensed Matter

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A short review of the pulsed electrically detected magnetic resonance (pEDMR) experiment is presented. PEDMR allows the highly sensitive observation of coherent electron spin motion of charge carriers and defects in semiconductors by means of transient current measurements. The theoretical foundations, the experimental implementation, its sensitivity and its potential with regard to the investigation of electronic transitions in semiconductors are discussed. For the example of the P b center at the crystalline silicon (111) to silicon dioxide interface it is shown experimentally how one can detect spin Rabi-oscillation, its dephasing, coherence decays and spin-coupling effects .

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Section: A Pedmr Experiments With P B -Centersmentioning

confidence: 99%

The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

Boehme

Lips

2006

Physica B: Condensed Matter

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“…Following Shockley and Read, 44 we derived an expression for the net recombination rate of the e-h pair caused by the SRH process connected with the metal vacancies in HgCdTe structures. 36 The net recombination rate for SRH mechanism may be expressed by:…”

Section: Srh Mechanismmentioning

confidence: 99%

Dislocations as a Noise Source in LWIR HgCdTe Photodiodes

Jóźwikowski

Jóźwikowska

Martyniuk

2016

Journal of Elec Materi

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The effect of dislocation on the 1/f noise current in long-wavelength infrared (LWIR) reverse biased HgCdTe photodiodes working at liquid nitrogen (LN) temperature was analyzed theoretically by using a phenomenological model of dislocations as an additional Shockley-Read-Hall (SRH) generation-recombination (G-R) channel in heterostructure. Numerical analysis was involved to solve the set of transport equations in order to find a steady state values of physical parameters of the heterostructure. Next, the set of transport equations for fluctuations (TEFF) was formulated and solved to obtain the spectral densities (SD) of the fluctuations of electrical potential, quasi-Fermi levels, and temperature. The SD of mobility fluctuations, shot G-R noise, and thermal noise were also taken into account in TEFF. Additional expressions for SD of 1/f fluctuations of the G-R processes were derived. Numerical values of the SD of noise current were compared with the experimental results of Johnson et al. Theoretical analysis has shown that the dislocations increase the G-R processes and this way cause the growth of G-R dark current. Despite the fact that dislocations increase both shot G-R noise and 1/f G-R noise, the main cause of 1/f current noise in LN cooled LWIR photodiodes are fluctuations of the carriers mobility determined by 1/f fluctuations of relaxation times. As the noise current is proportional to the total diode current, growth of G-R dark current caused by dislocations leads to the growth of noise current.

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“…The bimolecular recombination of charge carriers in the reservoir is assumed to be the dominant process at the charge-carrier densities encountered in laser devices. In order to model the full carrier-density dependent losses, one would need to take linear losses, e.g., Shockley-Read-Hall recombination via trap states [SHO52], as well as Auger-assisted recombination processes [BEA59] into account. Illustration of the quantum-dot subgroups to model inhomogeneous broadening.…”

Section: Maxwell-bloch Laser Rate Equationsmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Statistics of the Recombinations of Holes and Electrons

Cited by 5,833 publications

References 1 publication

The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

Dislocations as a Noise Source in LWIR HgCdTe Photodiodes

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

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