The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

Boehme, Christoph; Lips, K.

doi:10.1016/j.physb.2005.12.231

Cited by 20 publications

(68 citation statements)

References 19 publications

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“…Figure 3(b) shows the g-factors of the non-31 P lines as a function of the angle θ , obtained from the fit. It also displays a solid line which represents literature values for EPR 25 and EDMR 29,31 detected P b centers. Figure 3: (a) Plots of ∆I as functions of B 0 at arbitrary times t the after a microwave pulse with arbitrary length τ, frequency f ≈ 9.5 GHz and a power P = 8 W and under otherwise identical conditions as for the data in Fig.…”

Section: Experimental Datamentioning

confidence: 79%

“…This was overcome by a stepwise fit of the spectra: we first determine the 31 P spectrum and subsequently fit the two remaining non-phosphorous lines (eliminating six fit parameters). The separation of the low-field 31 P -hyperfine line from the strongly overlapping non-phosphorous lines was achieved by first fitting the high field 31 P hyperfine peak, which has little or no overlap with the other resonances, with a single Gaussian line. From the result of this fit, we can determine both the position (assuming a hyperfine splitting of A = 4.18 mT as verified by bulk EPR measurements) and shape (assuming only negligible nuclear polarization, which is justified for the given sample temperatures and magnetic fields B 0 ) of the low-field 31 P -hyperfine peak.…”

Section: Experimental Datamentioning

confidence: 99%

“…Our results are discussed with regard to their implications for the ability of spin qubit readout using interface defect probe spins whilst maintaining long coherence times. We emphasized that while the key questions motivating this study are centered about 31 P qubit coherence times, the study presented follows an extensive number of previous EPR 19,20,21,22,23,24,25 , EDMR 10,25,26,27,28 and pEDMR 29,30,31 studies carried out on various c-Si/SiO 2 interface defects as well as electronic trapping and recombination processes of interfaces with different surface orientations and 31 P doping concentrations. Most of these studies aimed to enhance the understanding of electronic processes relevant for materials systems used in conventional c-Si based microelectronics and photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

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T1andT2spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

et al. 2010

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A study of donor electron spins and spin-dependent electronic transitions involving phosphorous ( 31 P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO 2 ) interface is presented for [ 31 P] = 10 15 cm −3 and [ 31 P] = 10 16 cm −3 at about liquid 4 He temperatures (T = 5 K − 15 K). Using pulsed electrically detected magnetic resonance (pEDMR), spin-dependent transitions between the 31 P donor state and two distinguishable interface states are observed, namely (i) P b centers which can be identified by their characteristic anisotropy and (ii) a more isotropic center which is attributed to E ′ defects of the SiO 2 bulk close to the interface. Correlation measurements of the dynamics of spin-dependent recombination confirm that previously proposed transitions between 31 P and the interface defects take place. The influence of these electronic near-interface transitions on the 31 P donor spin coherence time T 2 as well as the donor spin-lattice relaxation time T 1 is then investigated by comparison of spin Hahn-echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that both T 2 and T 1 of 31 P donor electrons spins in proximity of energetically lower interface states at T ≤ 13 K are reduced by several orders of magnitude.

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Section: Experimental Datamentioning

confidence: 79%

Section: Experimental Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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T1andT2spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

et al. 2010

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“…The source-drain channel of the aFET is oriented along the symmetry axis of the resonator, parallel to the magnetic component (B 1 B ) and perpendicular to the electric component (E 1 ) of the microwave field (Figures 1(b), (c)). In order to minimize microwave absorption by metallic parts of the device, we adopted an elongated chip layout [10]. The device was current biased through the source and drain terminals, and the drain-source voltage (V ds ) was monitored while the BB 0 field was swept.…”

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confidence: 99%

Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

Bokor

Schenkel

et al. 2007

Applied Physics Letters

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We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spindependent scattering for the readout of donor spin-states in silicon based quantum computers. Neutral impurity scattering is spin-dependent because different spin configurations of the conduction and donor electrons (singlet or triplet) imply a different spatial distribution of the two-electron wavefunction, which translates into a difference in scattering crosssections. This SDS process by phosphorus impurities in an accumulation-mode fieldeffect transistor (aFET) was first observed by Ghosh and Silsbee using electrically detected magnetic resonance (EDMR) [9]. In an EDMR experiment, a static magnetic field induces a Zeeman splitting in the electron energy levels, and in thermal equilibrium, triplet scattering is favored as more spins are aligned with the static field. Singlet scattering can be enhanced by inducing spin flips with a resonant microwave field. This increase in singlet content then registers as an effective channel resistance change of the 3 aFET. Ghosh and Silsbee used large-area aFETs (1×0.1 mm 2 ) formed in bulk-doped silicon with about 2×10 17 phosphorus/cm 3 [9]. The number of donors close (~10 nm) to the aFET channel that contribute to SDS was estimated to be ~10 8 . However, bulk donors far away from the channel that did not contribute to SDS caused an undesired bolometric signal due to resonant microwave absorption, and substantial efforts were undertaken to resolve interfering bolometric effects and to isolate the SDS signal.In the present work, we demonstrate SDS by neutral 121 Sb donors in silicon aFETs. In order to avoid bolometric signals, aFETs were formed in undoped silicon and ~6×10 6 donors were implanted into the transistor channel. While most donor-based silicon quantum computer proposals have suggested spins of 31 P as qubits, 121 Sb is used in our experiments due to its smaller straggling in the channel implantation process, lower diffusion rates in silicon, and to avoid spurious signals arising from residual background 31 P atoms in the silicon substrate or from the polycrystalline silicon gate.

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“…In order to enhance the detection sensitivity, EPR has been combined with optical [3,4] and electrical detection schemes [5][6][7][8]. Electrically detected magnetic resonance (EDMR), in which the EPR induced change in spin population is detected through the change in conductivity of the sample [12,13], has been reported to provide a more than 10 6 times higher sensitivity than conventional EPR [9][10][11].…”

Section: Electron Paramagnetic Resonance [1] (Epr) Is An Important Spmentioning

confidence: 99%

Electrically detected magnetic resonance in a W-band microwave cavity

Lang

George

et al. 2011

Review of Scientific Instruments

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We describe a low-temperature sample probe for the electrical detection of magnetic resonance in a resonant W-band (94 GHz) microwave cavity. The advantages of this approach are demonstrated by experiments on silicon field-effect transistors. A comparison with conventional low-frequency measurements at X-band (9.7 GHz) on the same devices reveals an up to 100-fold enhancement of the signal intensity. In addition, resonance lines that are unresolved at X-band are clearly separated in the W-band measurements. Electrically detected magnetic resonance at high magnetic fields and high microwave frequencies is therefore a very sensitive technique for studying electron spins with an enhanced spectral resolution and sensitivity.

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The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects

Cited by 20 publications

References 19 publications

T1andT2spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

T1andT2spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors

Electrically detected magnetic resonance in a W-band microwave cavity

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