Static phase diagrams of reconstructions for MBE-grown GaAs(001) and AlAs(001) surfaces

Regiński, K.; Muszalski, J.; Preobrazhenskii, V.V.; Lubyshev, D I

doi:10.1016/0040-6090(95)06665-9

Cited by 26 publications

(14 citation statements)

References 2 publications

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“…An undoped on axis ( 70.11) GaAs (001) epi-ready substrate was cleaved to 11 Â 3.5 mm 2 in order to accommodate the sample mounting. The substrate temperature, T s values of 295 1C and 400 1C [7] were identified from As cap removal and c(4 Â 4)/(2 Â 4) transition in the absence of external flux, respectively. Sample heating has shown good uniformity, with 2 1C variation across the entire sample when observed by thermography camera and a 75 1C variation from sample to sample under identical heating conditions.…”

Section: Methodsmentioning

confidence: 99%

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Bastiman

Mohmad

et al. 2012

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Bastiman

Mohmad

et al. 2012

Journal of Crystal Growth

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“…T s values of 295 °C and 400 °C [6] were identified from As cap removal and c(4×4)/(2×4) transition in the absence of external flux, respectively. Samples were quenched for in vacuo scanning tunnelling microscopy (STM) imaging purposes before reheating and capped with GaAs for ex situ analysis.…”

Section: Methodsmentioning

confidence: 99%

GaAsBi atomic surface order and interfacial roughness observed by STM and TEM

Bastiman

Qiu

Walther

2011

J. Phys.: Conf. Ser.

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ukAbstract. GaAsBi is an interesting ternary material for opto-electronic applications. Bi fractions of 11-13% allow 1.55 µ m emissions from a range of bulk and QW structures. GaAsBi has shown strong room temperature photoluminescence. The temperature insensitive band gap and large spin orbit splitting are attractive optoelectronic features, however the typical full width half maximum is 2.5 times greater than GaAs. In solid source molecular beam epitaxy (MBE), near stoichiometric fluxes and low growth temperatures are necessary to achieve the desired Bi content. In order to explore photoluminescence linewidth broadening and the accommodation of strain a joint scanning tunnelling microscopy (STM) and scanning transmission electron microscopy (STEM) study of quasi-bulk and QW structures has been undertaken. IntroductionThe bismuth alloy GaAs 1-x Bi x has a number of interesting properties, namely band gap reductions of 88 meV/% and large spin orbital splitting [1,2]. The narrow, temperature insensitive band gap offered by such an alloy is particularly well suited to the fabrication of infra red emitters and photodetectors [2], however certain complications in the growth process have limited the impact of this alloy.The strong tendency towards surface segregation and droplet formation of Bi during epitaxy has led to unconventional low temperatures growth parameters. Dilute bismuthides can be grown at around 430 °C up to ~1% Bi [3], however for high compositions lower growth temperatures are necessary. It is common to grow at temperatures as low as 280 °C in order to ensure high quality, smooth epilayers are produced with >10% Bi fractions [4]. X-ray Diffraction (XRD) and photoluminescence (PL) data show high quality crystalline material with strong room temperature PL can be achieved. There are two restrictions to molecular beam epitaxy (MBE) growth of this ternary alloy. Firstly, in the 335 -400 °C growth temperature range the film thickness/composition is restricted via strain related undulations and eventually dislocations. Secondly, below 335 °C undulations and dislocations are reduced due to thermal limitations, however point defects strongly affect material quality.In this paper, scanning tunnelling microscopy (STM) and scanning transmission electron microscopy (STEM) are performed on samples grown at each of these limits in order to investigate observed XRD and PL phenomena.

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“…The phase boundaries divide the diagram into four regions with different reconstructions, except for the region of (3 × 1) reconstruction, where (3 × 6) one can also be seen. Activation energies for the phase transitions between reconstructions (2 × 4) → (3 × 1) and (3 × 1) → (4 × 2) are 3.64 eV and 3.30 eV, respectively [23].…”

Section: The Interfacial Misfit Array (Imf)mentioning

confidence: 99%

“…The studies were based on the static phase diagram for GaAs (001) surface and As 4 tetramers determined previously at our laboratory, Fig. 5, [23]. The phase boundaries divide the diagram into four regions with different reconstructions, except for the region of (3 × 1) reconstruction, where (3 × 6) one can also be seen.…”

Section: The Interfacial Misfit Array (Imf)mentioning

confidence: 99%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

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A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger's circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger's vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM 2θ/ω = 42 arcsec, FWHM RC = 125 arcsec. The EPD = 4 × 10 6 cm − 2 was estimated after etching in FeCl 3 :HCl solution. The Δq z /Δq x ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were: p = 4.0 × 10 16 cm −3 (2.0 × 10 16 cm −3 ) and µ = 599 cm 2 /V s (3420 cm 2 /V s) at 300 K (77 K).

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Static phase diagrams of reconstructions for MBE-grown GaAs(001) and AlAs(001) surfaces

Cited by 26 publications

References 2 publications

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

GaAsBi atomic surface order and interfacial roughness observed by STM and TEM

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

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