The multiple-scattering or Korringa-Kohn-Rostoker method is employed to calculate the photonic bands of the two-dimensional honeycomb dielectric structure. The results of the calculation are compared with those obtained using the plane-wave expansion method and are found to be in excellent agreement with each other.
Damage evolution and dopant distribution
during nanosecond laser
thermal annealing of ion implanted silicon have been investigated
by means of transmission electron microscopy, secondary ion mass spectrometry,
and atom probe tomography. Different melting front positions were
realized and studied: nonmelt, partial melt, and full melt with respect
to the as-implanted dopant profile. In both boron and silicon implanted
silicon samples, the most stable form among the observed defects is
that of dislocation loops lying close to (001) and with Burgers vector
parallel to the [001] direction, instead of conventional {111} dislocation
loops or {311} rod-like defects, which are known to be more energetically
favorable and are typically observed in ion implanted silicon. The
observed results are explained in terms of a possible modification
of the defect formation energy induced by the compressive stress developed
in the nonmelted regions during laser annealing.
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