Static and Clocked Spintronic Circuit Design and Simulation With Performance Analysis Relative to CMOS

There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and phenomena continue to be discovered at an impressive rate, providing an ever-increasing set of building blocks that could be exploited in designing transistor-like functional devices of the future. The objective of this paper is to provide a quantitative foundation for this building block approach, so that new discoveries can be integrated into functional device concepts, quickly analyzed and critically evaluated. Through careful benchmarking against available theory and experiment we establish a set of elemental modules representing diverse materials and phenomena. These elemental modules can be integrated seamlessly to model composite devices involving both spintronic and nanomagnetic phenomena. We envision the library of modules to evolve both by incorporating new modules and by improving existing modules as the field progresses. The primary contribution of this paper is to establish the ground rules or protocols for a modular approach that can build a lasting bridge between materials scientists and circuit designers in the field of spintronics and nanomagnetics.

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“…2a), obtained from a spin-diffusion equation1454. The series conductance for a + z directed magnet is given as:…”

Section: Spin Valvesmentioning

confidence: 99%

Modular Approach to Spintronics

Çamsarı¹,

Ganguly²,

Datta³

2015

Sci Rep

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“…The polarity of this bias can be changed to switch between AND and OR logic. It is assumed that the input nanomagnets have been reversed at time τ = 0 and the voltage supplies at these nanomagnets are turned on at this time 44 .…”

Section: And-gate Analysismentioning

confidence: 99%

A Probability-Density Function Approach to Capture the Stochastic Dynamics of the Nanomagnet and Impact on Circuit Performance

Kani

Rakheja

Naeemi

2016

IEEE Trans. Electron Devices

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In this paper we systematically evaluate the variation in the reversal delay of a nanomagnet driven by a longitudinal spin current while under the influence of thermal noise. We then use the results to evaluate the performance of an All-Spin-Logic (ASL) circuit. First, we review and expand on the physics of previously-published analytical models on stochastic nanomagnet switching. The limits of previously established models are defined and it is shown that these models are valid for nanomagnet reversal times < 200 ps. Second, the insight obtained from previous models allows us to represent the probability density function (PDF) of the nanomagnet switching delay using the double exponential function of the Fréchet distribution. The PDF of a single nanomagnet is extended to more complex nanomagnet circuit configurations. It is shown that the delay-variation penalty incurred by nanomagnets arranged in parallel configuration is dwarfed by the average delay increase for nanomagnets arranged in a series configuration. Finally, we demonstrate the impact of device-level performance variation on the circuit behavior using ASL logic gates. While the analysis presented in this paper uses an ASL-AND gate as the prototype switching circuit in the spin domain, the physical concepts are generic and can be extended to any complex spin-based circuit.arXiv:1607.06046v1 [cond-mat.mes-hall]

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“…2(b) is discussed in Section V. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 3 III. MICROMAGNETIC SIMULATION OF DETECTOR/RECEIVERS FOR ASLD Apart from the mono-domain assumption, an important factor ignored in the analysis of ASL so far [2], [3], [15], [24] is that, the entire area of the detector is not under the influence of STT generated by the spin diffusion current. Hence, the fact that the influence area (IA) is smaller than the detector area needs to be taken into account.…”

Section: Asld Architecture and Operationmentioning

confidence: 99%

“…The spin transport characteristics of spin circuit for NLSV are captured based on the lumped spin circuit model used in [4], [15] and [24]. A lumped circuit representation is derived for each region (FM, graphene and tunnel region) of the spin circuit structure, by solving the spin diffusion equations for spin and charge transport separately.…”

Section: Tcl Modelmentioning

confidence: 99%

All Spin Logic: A Micromagnetic Perspective

2015

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Most investigations of all spin logic (ASL) havebeen based on the mono -domain approximation of magnetization switching. The sensitive and stochastic nature of spin transfer torque (STT) switching creates pressing requirements for analyzing all spin logic from a micromagnetic perspective also. Hence, in this paper, all spin logic is studied from a micromagnetic perspective by developing a simulation framework that can capture diffusive spin transport. The spin transport model is calibrated from existing experimental results on non-local spin valve measurements. Then, using this framework, spin transfer torque switching is studied for inputoutput nano-magnets with in-plane and perpendicular magnetic anisotropy for all spin logic devices (ASLD). Precisely defined architecture and design constraints for such input-output nanomagnets are presented. Further, a previously proposed switching mechanism by driving the nano-magnet into a metastable state is also incorporated into micromagnetic framework. By using the aforementioned mechanism, the critical current required for spin transfer torque switching can be reduced to as low as 20μA. Moreover, graphene channel all spin logic device using tunnel contact at the injector is demonstrated for copy and invert logic operations.Index Terms-All spin logic (ASL), micromagnetic simulation, perpendicular magnetic anisotropy (PMA), spin transfer torque (STT), spin transport. area of high speed interconnects, low power VLSI design, nanoscale devices, carbon nanotube based designs, organic thin film transistor design and modelling, and spintronics based devices and circuits.

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Static and Clocked Spintronic Circuit Design and Simulation With Performance Analysis Relative to CMOS

Cited by 48 publications

References 17 publications

Modular Approach to Spintronics

Modular Approach to Spintronics

A Probability-Density Function Approach to Capture the Stochastic Dynamics of the Nanomagnet and Impact on Circuit Performance

All Spin Logic: A Micromagnetic Perspective

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