2002
DOI: 10.1143/jjap.41.2163
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State-of-the-Art Reactive Pulsed Laser Deposition of Nitrides

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Cited by 28 publications
(8 citation statements)
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“…The material stoichiometry in films processed by RPLD is associated to the background gas pressure; the gas is able to react with the ablated species not only in the gas phase, but also at the target and substrate surfaces [9]. Consequently the film composition can be customized by controlling the deposition pressure, being feasible to grow materials in metastable states by RPLD.…”
Section: Discussionmentioning
confidence: 99%
“…The material stoichiometry in films processed by RPLD is associated to the background gas pressure; the gas is able to react with the ablated species not only in the gas phase, but also at the target and substrate surfaces [9]. Consequently the film composition can be customized by controlling the deposition pressure, being feasible to grow materials in metastable states by RPLD.…”
Section: Discussionmentioning
confidence: 99%
“…Our PLAD experiments were carried out in high vacuum stainless-steel system (reported elsewhere) pumped to a base pressure of 10 −5 Pa by a turbomolecular pump [11]. The used laser source was an UV XeCl excimer laser (Lambda-Physik, LPX 315i, = 308 nm, = 30 ns, repetition rate of 10 Hz).…”
Section: Methodsmentioning
confidence: 99%
“…The ablation mechanism of Group III nitrides by PLD differs between nitride and metal targets [79]. Polycrystalline GaN and AlN targets exhibiting higher purity and lower surface area than their ceramic counterparts have recently become available.…”
Section: Group III Nitridesmentioning
confidence: 99%