2013
DOI: 10.1016/j.jcrysgro.2013.01.018
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State of the art of the heavy metal iodides as photoconductors for digital imaging

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Cited by 9 publications
(6 citation statements)
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“…As shown in Figure 1f, the surface roughne the film gets better with the growth temperature arising, which is in favor of elect deposition, comparing the former two surface structures of the films grown. More portantly, the improvement of the orientation due to the increasing of depositing tem ature is favorable to the sensitivity of the detector [25]. Therefore, the present result tribute to (001) orientation of the film and formation of the uniform electrical field.…”
Section: Resultssupporting
confidence: 55%
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“…As shown in Figure 1f, the surface roughne the film gets better with the growth temperature arising, which is in favor of elect deposition, comparing the former two surface structures of the films grown. More portantly, the improvement of the orientation due to the increasing of depositing tem ature is favorable to the sensitivity of the detector [25]. Therefore, the present result tribute to (001) orientation of the film and formation of the uniform electrical field.…”
Section: Resultssupporting
confidence: 55%
“…It is worth indicating that the growth of HgI 2 poly-film by PVD had the lowest source temperature, the lowest depositing temperature and the shortest period, compared with those of PbI 2 , BiI 3 , PbBr 2 , HgBr 2 , and HgBrI, which was thought for a future scale-up to larger areas [14]. Hence, the films have been grown with area from tens to hundreds cm 2 [21,22], and thickness from tens to 1800 µm [10,[23][24][25] by PVD for the application of imaging detectors.…”
Section: Introductionmentioning
confidence: 99%
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“…However, to preserve the stability of TFT or CMOS devices, the film growth should be restricted to temperatures up to 200 °C. 16 α-Se can be easily evaporated onto a large area, making a dominated active matrix for X-ray imaging because of its low boiling point. But the detection efficiency is limited because of the lower atomic number (Z = 34), poor mobility-lifetime product (μτ), and relatively higher creation energy of electron−hole pair (E pair = 50 eV).…”
mentioning
confidence: 99%
“…Direct conversion requires an insulating material with good photoconduction properties. Red mercury diodide, α-HgI 2 , has thus long been recognized as a material of choice for this application owing to its high X-ray absorption efficiency and its suitable electrical transport properties [3][4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%