State of the art HOT performances for Sofradir II-VI extrinsic technologies

Rubaldo, L.; Brunner, A.; Guinedor, Pierre; Taalat, R.; Sam-Giao, Diane; Kerlain, A.; Dargent, L.; Nicolas, P.; Chaffraix, Vincent; Bourqui, Marie-Lise; Loquet, Yannick; Coussement, J.

doi:10.1117/12.2229308

Cited by 5 publications

(4 citation statements)

References 10 publications

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“…HgCdTe uniformity varies widely by device but tends to be less stable than T2SLS over time and multiple cooldown cycles, with typical RFPN values above 70% of NETD. This study only addressed RFPN and did not consider operability or cluster defects, improvements in which may favour III-V materials [17,21,23,61,62,[68][69][70][71][72][73][74][75].…”

Section: Recently Reported Infrared Detector Performancementioning

confidence: 99%

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

2024

Opto-Electronics Review

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Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.

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Section: Recently Reported Infrared Detector Performancementioning

confidence: 99%

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

2024

Opto-Electronics Review

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“…In the literature, dark current studies for P on N technology [17], [18] focus on two types of infrared bands: MWIR blue (λ = 4.2 μm at 150 K and bandgap of 0.3 eV) and In both cases, the mean activation energy for dark current is around the value of the full bandgap. This reveals that on the contrary to InSb imagers, the mean dark current seems to be dominated by the diffusion mechanism.…”

Section: Mean Dark Current In Hgcdte-based Imagersmentioning

confidence: 99%

Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Durnez

Goiffon

Virmontois

et al. 2020

IEEE Trans. Electron Devices

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In this work, the parasitic discrete fluctuation of dark current (dc) called random telegraph signal (RTS) is analyzed in image sensors based on two different semiconductor materials: InSb and silicon. The results show that this dc-RTS phenomenon exhibits similar characteristics on both technologies strongly suggesting a common physical origin. This conclusion is extended to InGaAs and HgCdTe (also referred to as MCT)-based image sensors by comparing the presented results to the existing literature.

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“…Many evolutions of the technology have been performed since those first achievements, for different purposes: performances enhancement to lower 1/f noise contribution, reduction of defective pixels for HOT applications in mid and long wavelength [3][4], short [5][6] [7] and very long wavelength [8] [9] array manufacturing for space applications. This technology has demonstrated all its capabilities to address many different applications.…”

Section: Introductionmentioning

confidence: 99%

Small pixel pitch MCT P on N MWIR photodiodes at DEFIR: towards 7.5um and beyond with very high image quality

Baier

Gravrand

LeGoff

et al. 2023

Infrared Technology and Applications XLIX

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MCT p-on-n photodiodes manufactured at Lynred and CEA-LETI have demonstrated state of the art performances for HOT applications. On blue and red mid infrared bands on 15μm pixel pitch, respectively 150 and 130K operating temperatures have been obtained, due to diffusion limited dark current and low defectivity. To achieve equivalent results on smaller pixel, the p-on-n technology at DEFIR, joint laboratory between Lynred and CEA-LETI, has been improved. The technological process was modified to ensure a proper diode formation and to efficiently passivate the interface between MCT and encapsulation layers, especially in the vicinity of the space charge region. The manufactured arrays with a 5.3μm cutoff wavelength have been hybridized on a digital output SXGA (1280×1024) direct injection ROIC with a pixel pitch of 7.5 μm. This paper present the measured current, blackbody responsivity and RMS noise on FPAs with F/4 numerical aperture. We will also discuss spectral response, quantum efficiency, shot-noise limited photodiodes and noise histograms shapes and their distribution tails at 130K. The very low number of defective pixel allow to address higher operating temperature and measurements have been performed at 140K and even 150K with very limited performance degradation. Pixel pitch of 5 μm has been characterized on test chips and present I-V curves with low dispersion and long bias plateau. As for larger pixel sizes, these photodiodes are shot-noise limited. Modulation transfer function has been measured by electron beam induced current and presents high value, up to 56%.

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State of the art HOT performances for Sofradir II-VI extrinsic technologies

Cited by 5 publications

References 10 publications

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Comparison of Dark Current Random Telegraph Signals in Silicon and InSb-Based Photodetector Pixel Arrays

Small pixel pitch MCT P on N MWIR photodiodes at DEFIR: towards 7.5um and beyond with very high image quality

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