State of the Art and Future Perspectives in Advanced CMOS Technology

Radamson, Henry H.; Zhu, Huilong; Wu, Zhenhua; He, Xiaobin; Lin, Hongxiao; Liu, Jinbiao; Xiang, Jinjuan; Kong, Zhenzhen; Xiong, Wentao; Li, Junjie; Cui, Hushan; Gao, Jianfeng; Yang, Hong; Du, Yong; Xu, Buqing; Li, Ben; Zhao, Xu; Yu, Jiahan; Yan, Dong; Wang, Guilei

doi:10.3390/nano10081555

Cited by 125 publications

(75 citation statements)

References 436 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Furthermore, 3D nanomagnets present several key features to postulate a paradigmatic solution to different challenges that the semiconductor industry must confront in the years to come to reconcile continued miniaturization, increasing performance and reduced power consumption [ 5 , 6 , 7 ]. The transition to 3D nanoarchitectures would overcome the intrinsic areal density limitations of conventional CMOS technologies caused by increasing leakage currents due to quantum effects [ 8 ]. They may also reduce the power consumption by storing and processing memory by ultrafast magnetic domain walls or skyrmions driven by low-power spin currents [ 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

Focused-Electron-Beam Engineering of 3D Magnetic Nanowires

Magén

Pablo-Navarro

2021

Nanomaterials

View full text Add to dashboard Cite

Focused-electron-beam-induced deposition (FEBID) is the ultimate additive nanofabrication technique for the growth of 3D nanostructures. In the field of nanomagnetism and its technological applications, FEBID could be a viable solution to produce future high-density, low-power, fast nanoelectronic devices based on the domain wall conduit in 3D nanomagnets. While FEBID has demonstrated the flexibility to produce 3D nanostructures with almost any shape and geometry, the basic physical properties of these out-of-plane deposits are often seriously degraded from their bulk counterparts due to the presence of contaminants. This work reviews the experimental efforts to understand and control the physical processes involved in 3D FEBID growth of nanomagnets. Co and Fe FEBID straight vertical nanowires have been used as benchmark geometry to tailor their dimensions, microstructure, composition and magnetism by smartly tuning the growth parameters, post-growth purification treatments and heterostructuring.

show abstract

Section: Introductionmentioning

confidence: 99%

Focused-Electron-Beam Engineering of 3D Magnetic Nanowires

Magén

Pablo-Navarro

2021

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…Since 1970, we saw the doubling of Si transistors inside the same integrated circuit area approximately every 2 years. This technological trend was discovered by Moore, and is known as Moore’s law [ 1 , 2 , 3 ]. However, the trend has started to change in the last decades, reaching the saturation regime due to the complexity of a further down-scaling.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

2021

View full text Add to dashboard Cite

Silicon is the undisputed leader for microelectronics among all the industrial materials and Si nanostructures flourish as natural candidates for tomorrow’s technologies due to the rising of novel physical properties at the nanoscale. In particular, silicon nanowires (Si NWs) are emerging as a promising resource in different fields such as electronics, photovoltaic, photonics, and sensing. Despite the plethora of techniques available for the synthesis of Si NWs, metal-assisted chemical etching (MACE) is today a cutting-edge technology for cost-effective Si nanomaterial fabrication already adopted in several research labs. During these years, MACE demonstrates interesting results for Si NW fabrication outstanding other methods. A critical study of all the main MACE routes for Si NWs is here presented, providing the comparison among all the advantages and drawbacks for different MACE approaches. All these fabrication techniques are investigated in terms of equipment, cost, complexity of the process, repeatability, also analyzing the possibility of a commercial transfer of these technologies for microelectronics, and which one may be preferred as industrial approach.

show abstract

“…Some new kinds of devices [ 14 , 15 , 16 ] have now been reported for MOSFET alternatives. Gate-all-around (GAA) silicon nanowire (Si NW) or nanosheet (NS) field effect transistor (FET) is regarded as the most likely candidate to replace FinFET in the next CMOS technology nodes [ 17 , 18 ], and has better gate control ability for scaling down with lower power dissipation and higher integration density as well as the application for cryo-CMOS. In addition, the quantum confinement effect will be more pronounced in the small-size GAA NW devices.…”

Section: Introductionmentioning

confidence: 99%

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Zhang

et al. 2021

Nanomaterials

Self Cite

View full text Add to dashboard Cite

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.

show abstract

State of the Art and Future Perspectives in Advanced CMOS Technology

Cited by 125 publications

References 436 publications

Focused-Electron-Beam Engineering of 3D Magnetic Nanowires

Focused-Electron-Beam Engineering of 3D Magnetic Nanowires

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

Contact Info

Product

Resources

About