State of Stress in the Near-Contact Region of a Semiconductor during Metallization Track Electrodegradation

Скворцов, А. А.; Koryachko, M. V.; Voloshinov, E. B.

doi:10.1134/s0036029520130364

Cited by 1 publication

(2 citation statements)

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“…Boron-doped silicon wafers oriented in the (111) direction with a resistivity ρ=0.01 Ω•cm were used as substrates [12]. The thickness of the metal sublayer h2 varied in the range of 100 nm, and the thickness of the aluminum film h1 up to 3 µm [13]. Next, a test structure was formed using optical photolithography (Figure 1).…”

Section: Methodsmentioning

confidence: 99%

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Dynamics of thermal destruction of Al-(Ti,SiO2)-Si structures under pulsed action

Koryachko,

Varlamov,

Skvortsov

et al. 2024

Third International Conference on Optics, Computer Applications, and Materials Science (CMSD-III 2023)

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The work carried out an experimental study of the features of thermal destruction of Al-Ti-Si, Al-SiO2-Si and Al-Si systems under pulsed current exposure. The dynamics of heating systems at current densities j>3•10 10 A/m 2 and durations up to 500 µs are presented. The initial stages of melting processes in thin-film systems and the mechanisms of destruction of structures during the passage of a single rectangular current pulse have been identified. Thus, the presence of a Ti sublayer increases the thermal stability of a multilayer system; the main mechanisms of destruction of structures are associated with the phenomenon of electrical transfer, as well as the migration of molten zones in the temperature gradient field after turning off the pulse near a local heat source. The presence of a dielectric sublayer of SiO2 leads to increased thermal loads on the metallization system (at j=3.10 10 A/m 2 and pulse duration up to 450 µs) compared to the Al-Si structure.

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Section: Methodsmentioning

confidence: 99%

“…To consider the issue of destruction of multilayer thin-film systems, special attention should be paid to the temperature conditions of operation of Al-(Ti,SiO2)-Si structures. The dynamics of the metallization track temperature T1(t) was calculated from the change in voltage drop U(t) [12][13]:…”

Section: Methodsmentioning

confidence: 99%