Dynamics of thermal destruction of Al-(Ti,SiO2)-Si structures under pulsed action

Abstract

The work carried out an experimental study of the features of thermal destruction of Al-Ti-Si, Al-SiO2-Si and Al-Si systems under pulsed current exposure. The dynamics of heating systems at current densities j>3•10 10 A/m 2 and durations up to 500 µs are presented. The initial stages of melting processes in thin-film systems and the mechanisms of destruction of structures during the passage of a single rectangular current pulse have been identified. Thus, the presence of a Ti sublayer increases the thermal stability of a multilayer system; the main mechanisms of destruction of structures are associated with the phenomenon of electrical transfer, as well as the migration of molten zones in the temperature gradient field after turning off the pulse near a local heat source. The presence of a dielectric sublayer of SiO2 leads to increased thermal loads on the metallization system (at j=3.10 10 A/m 2 and pulse duration up to 450 µs) compared to the Al-Si structure.