Stark effect in type-II Ge/Si quantum dots

Yakimov, A. I.; Двуреченский, А. В.; Никифоров, А. И.; Ulyanov, Vladimir V.; Milekhin, A. G.; Govorov, A. O.; Schulze, Steffen; Zahn, Dietrich R. T.

doi:10.1103/physrevb.67.125318

Cited by 39 publications

(18 citation statements)

References 32 publications

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“…26 For type-II band alignment, even larger changes were measured (Δλ = 85 nm, Δλ/λ = 7.14% for ΔF = 80 kV/cm). 27 Nonetheless, the advent of colloidal QD synthesis led to extensive examination, mostly at low temperature (LT), of their QCSE. 28 Wavelength shifts of type-I NPs are usually small (Δλ = 6.0 nm, Δλ/λ = 1.0% for ΔF = 350 kV/cm).…”

Section: Othersmentioning

confidence: 99%

Single molecule quantum-confined Stark effect measurements of semiconductor nanoparticles at room temperature

Park

Deutsch

et al. 2013

SPIE Proceedings

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C olloidal semiconductor quantum dots (QDs) and nanorods (NRs) are nanometer-sized single-crystal nanoparticles (NPs) nucleated from a hot solution of precursor molecules. Their size and shape can be precisely controlled by the duration, temperature, and ligands used in the synthesis. 1À3 This method yields QDs orNRs that have composition and size-dependent absorption and emission wavelengths covering the entire spectral range from the visible to the NIR regions.

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Section: Othersmentioning

confidence: 99%

Single molecule quantum-confined Stark effect measurements of semiconductor nanoparticles at room temperature

Park

Deutsch

et al. 2013

SPIE Proceedings

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“…The vertically stacked Ge islands on Si(1 0 0) show a strong photo-and electroluminescence at the wavelength of 1.5 mm up to room temperature [6,7]. The electronic properties of strained pyramid-shaped Ge/Si (1 0 0) quantum dots were investigated [8][9][10][11]. Raman spectroscopy was successfully used to characterize the strain condition of Ge islands on Si(1 0 0) [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system

Teys

Talochkin

Olshanetsky

2009

Journal of Crystal Growth

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“…SiGe/Si quantum wells with type-I alignment (electron and hole minima in the same material layer) show either no QCSE [13] or relatively inefficient effects [14], [15]. Strained SiGe/Si quantum wells on relaxed SiGe buffers [16] and Ge/Si quantum dots [17] on Si substrates, with type-II band alignment (electron and hole energy minima in different layers), can exhibit large shifts of optical transitions with the electric field, but have relatively low absorption associated with the shifting transitions.…”

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confidence: 99%

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

Kuo

Lee

et al. 2006

IEEE J. Select. Topics Quantum Electron.

154

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Abstract-We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates, in good agreement with theoretical calculations. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also demonstrate that the effect can be seen over the C-band around 1.55-µm wavelength in structures heated to 90• C, similar to the operating temperature of silicon electronic chips. The physics of the effects are discussed, including the effects of strain, electron and hole confinement, and exciton binding, and the reasons why the effects should be observable at all in such an indirect gap material. This effect is very promising for practical high-speed, low-power optical modulators fabricated compatible with mainstream silicon electronic integrated circuits.Index Terms-Electroabsorption effect, germanium, optical interconnections, optical modulators, quantum-confined Stark effect (QCSE), silicon.

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Stark effect in type-II Ge/Si quantum dots

Cited by 39 publications

References 32 publications

Single molecule quantum-confined Stark effect measurements of semiconductor nanoparticles at room temperature

Single molecule quantum-confined Stark effect measurements of semiconductor nanoparticles at room temperature

Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si for Optical Modulators

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