2014
DOI: 10.1016/j.tsf.2013.11.030
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Stannic oxide thin film growth via ion-beam-sputtering

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Cited by 13 publications
(5 citation statements)
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“…Other groups have reported a great many results for the orientation relationships of SnO 2 films on sapphire substrates of different orientation, but to our knowledge no reports on performance of layer growth by IBSD on all of these substrate orientations have been published. In previous work, SnO 2 films with various orientations were successfully obtained on sapphire by variation of substrate temperature and gas fluxes . In the present study, we demonstrate SnO 2 films prepared under identical growth conditions on (0001) ( c ‐plane), (011¯2) ( r ‐plane), (112¯0) ( a ‐plane), and (101¯0) ( m ‐plane) sapphire.…”
Section: Introductionsupporting
confidence: 59%
“…Other groups have reported a great many results for the orientation relationships of SnO 2 films on sapphire substrates of different orientation, but to our knowledge no reports on performance of layer growth by IBSD on all of these substrate orientations have been published. In previous work, SnO 2 films with various orientations were successfully obtained on sapphire by variation of substrate temperature and gas fluxes . In the present study, we demonstrate SnO 2 films prepared under identical growth conditions on (0001) ( c ‐plane), (011¯2) ( r ‐plane), (112¯0) ( a ‐plane), and (101¯0) ( m ‐plane) sapphire.…”
Section: Introductionsupporting
confidence: 59%
“…SnO 2 in rutile structure, a wide band gap n‐type semiconductor, has been widely used in semiconductor gas sensors , thin‐film transistors , solar cells , oxidation catalysts for CO , and CH 4 , transparent electrode for flat panel displays , and lithium ion batteries owing to low electrical resistivity, high transmission in the visible region, good electrochemical properties and high chemical stability. The fabrication of SnO 2 thin films, especially high quality epitaxial films, has been studied by various deposition techniques including oxygen plasma‐assisted molecular beam epitaxy , physical vapor deposition , pulsed laser deposition , spray pyrolysis , sputtering , atomic layer deposition (ALD) , and chemical vapor deposition (CVD) . CVD is an advantageous deposition method particularly suited for the synthesis of high purity crystals with excellent crystalline and optical properties .…”
Section: Introductionmentioning
confidence: 99%
“…The thin films of pure or doped SnO 2 can be prepared by different deposition techniques, including sol-gel-dip coatings [13], metal-organic chemical vapor deposition (MOCVD) [14,15], chemical bath deposition (CBD) [16], spray pyrolysis [17], electron beam evaporation [18] and sputtering [19,20,21,22]. However, it is necessary to carry out either a heat treatment of substrates during the deposition process or the post-annealing procedure to obtain low resistivity and to retain high transmittance.…”
Section: Introductionmentioning
confidence: 99%
“…A number of studies have been reported on the effect of the oxygen gas ratio [ 6 ], substrate temperature and type, annealing temperature [ 7 , 8 , 9 ] and doping elements [ 10 , 11 , 12 ] on improving the structural, electrical and optical properties of the SnO 2 thin film in the past few decades. The thin films of pure or doped SnO 2 can be prepared by different deposition techniques, including sol-gel-dip coatings [ 13 ], metal-organic chemical vapor deposition (MOCVD) [ 14 , 15 ], chemical bath deposition (CBD) [ 16 ], spray pyrolysis [ 17 ], electron beam evaporation [ 18 ] and sputtering [ 19 , 20 , 21 , 22 ]. However, it is necessary to carry out either a heat treatment of substrates during the deposition process or the post-annealing procedure to obtain low resistivity and to retain high transmittance.…”
Section: Introductionmentioning
confidence: 99%