On the Growth of Stannic Oxide by Ion Beam Sputter Deposition (IBSD)

Becker, Martin; Polity, A.; Klar, Peter J.

doi:10.1002/pssa.201700623

Cited by 4 publications

(1 citation statement)

References 41 publications

(41 reference statements)

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“…Small peaks at 32.8 o and 33.7 o are fringes from interference of ZION (002) peak. The fringes are Laue oscillations [22], suggesting flat surface of the ZION film. This is consistent with the RMS surface roughness of 0.52 nm, examined by atomic force microscopy (not shown here).…”

Section: Resultsmentioning

confidence: 94%

Photoluminescence of (ZnO)0.82(InN)0.18 Films: Incident Light Angle Dependence

Miyahara

Iwasaki

Yamashita

et al. 2018

MSF

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We have fabricated a new semiconducting material, (ZnO)x(InN)1-x(called ZION hereafter), which is a pseudo-binary alloy of wurtzite ZnO (band gap: 3.4 eV) and wurtzite InN (band gap: 0.7 eV). We have succeeded in fabricating epitaxial (ZnO)0.82(InN)0.18films on ZnO templates by RF magnetron sputtering. XRD measurements show that the full width at half maximum of the rocking curves from (101) plane and (002) plane are significantly small of 0.11 ̊ and 0.16 ̊, respectively, indicating good in-plane and out-of-plane crystal alignment. High crystal quality of the films was also proved by deducing the defect density from XRD analysis showing that the edge type dislocation density is low of 8.2×108cm-2. Furthermore, we observed room temperature photoluminescence from ZION films as a parameter of incident angle of He-Cd laser light. The results indicate that an emission peak of 2.79 eV is originated from ZION.

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Section: Resultsmentioning

confidence: 94%

Photoluminescence of (ZnO)0.82(InN)0.18 Films: Incident Light Angle Dependence

Miyahara

Iwasaki

Yamashita

et al. 2018

MSF

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Materials processing using radio-frequency ion-sources: Ion-beam sputter-deposition and surface treatment

Becker

Gies

Polity

et al. 2019

Review of Scientific Instruments

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The capabilities of ion-beam techniques for thin-film processing, i.e., for materials deposition by ion-beam sputtering and surface treatment, are reviewed. The basic interaction mechanisms between ions and solids are summarized and related to materials processing by ion sources. Typical geometries of ion sources, targets, and samples are discussed for corresponding experimental apparatus. The versatility of ion-beam techniques in the preparation of thin films and multilayer structures is illustrated by several examples: ion-beam sputter-deposition of various binary oxide materials (including crystalline MgO, NiO, ZnO, SnxOy, and CuxOy) as well as combinatorial growth of materials libraries of amorphous ternary oxides. Furthermore, controlled ion-beam etching of surfaces is discussed.

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Controlled thin-film deposition of α or β Ga2O3 by ion-beam sputtering

Becker

Benz

Chen

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The wide bandgap of oxide semiconductors enables solid-state devices with functionalities beyond the reach of technologically more well-established materials such as silicon, germanium, or gallium nitride. These functionalities, among others, include optical transparency paving the way for transparent (opto-)electronics like ultraviolet light emitters or solar-blind detectors as well as large breakdown fields enabling high-power electronic applications. In particular, Ga2O3 is considered as oxide compatible with the nitride III-V materials. As a particular challenge, Ga2O3 may crystallize in different polymorphs. All possess large optical bandgaps beyond 4.8 eV and, thus, are of great interest for such devices. Nowadays, Ga2O3 thin films are prepared by a plethora of different synthesis methods including physical as well as chemical variants, however, reports on a controlled manufacturing process of individual Ga2O3 phases with sputtering techniques are currently scarce. Here, we grow Ga2O3 thin films by ion-beam sputtering on sapphire substrates of different orientation and demonstrate that selective controlled synthesis of different Ga2O3 polymorphs is feasible. The monoclinic β-phase and the corundum-type α-phase are stabilized when deposited on (0001) and (10–10) sapphire substrates, respectively. A stacking rather than a mixture of both phases is observed when thin films of α-phase exceed a certain thickness. Thus, thickness control enables the transition between the two phases. The proposed technique holds promise for ion-beam sputter methods to be employed in Ga2O3-related device build-up.

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On the Growth of Stannic Oxide by Ion Beam Sputter Deposition (IBSD)

Cited by 4 publications

References 41 publications

Photoluminescence of (ZnO)<sub>0.82</sub>(InN)<sub>0.18</sub> Films: Incident Light Angle Dependence

Photoluminescence of (ZnO)<sub>0.82</sub>(InN)<sub>0.18</sub> Films: Incident Light Angle Dependence

Materials processing using radio-frequency ion-sources: Ion-beam sputter-deposition and surface treatment

Controlled thin-film deposition of α or β Ga2O3 by ion-beam sputtering

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