Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)

Brault, J.; Gendry, M.; Marty, Olivier; Pitaval, M.; Olivares, J.; Grenet, Geneviève; Hollinger, G.

doi:10.1016/s0169-4332(00)00254-3

Cited by 54 publications

(56 citation statements)

References 14 publications

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“…It is thus expected that the produced phase separation increases the Ga concentration in the vicinity of the dots (as open V-shaped arms) at the expense of the Ga concentration in the AlGaN alloy. Therefore, the strained deposited GaN QDs provide a clearly nonhomogeneous surface strain distribution that also contributes to alloy decomposition, as it was already reported in systems such as InAs/InAlAs [15].…”

Section: Remces XIIsupporting

confidence: 59%

Recent TEM developments applied to quantum structures

Benaı̈ssa¹,

Korytov²,

Aken

et al. 2013

MATEC Web of Conferences

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Abstract. To shed light on these confined properties, a technique with a high energy-and-spatial resolution is of absolute need. Modern transmission electron microscopy (TEM) is the most suitable technique for a direct measurement of optical and structural properties at a nanometer scale. Thanks to the successful construction of aberration corrected transmission electron microscopes, the mapping of atomic positions with high accuracy becomes a routine experiment enabling therefore a more intuitive interpretation of structural deformation (strain). In addition, the recent development in energy-filters, especially when coupled to monochromated electron-beams, measurements of physical properties are achieved with unprecedented performances. The case of individual buried GaN/(AlGaN) quantum dots is discussed.

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Section: Remces XIIsupporting

confidence: 59%

Recent TEM developments applied to quantum structures

Benaı̈ssa¹,

Korytov²,

Aken

et al. 2013

MATEC Web of Conferences

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“…52 As Qwire structure that increasing the amount of InAs deposition from 1.5-7.5 ML resulted in more inhomogeneous and large size Qwire formation [178]. This work was soon followed by a thorough investigation of the effect of AlInAs spacer/buffer layer thickness in a multi-stack Qwire structure on its optical characteristics by Brault et al [179]. A fixed 5-stack Qwire sample with 3 ML InAs deposition thickness and 120 s growth interruption was employed in the study, and varying the AlInAs thickness from 5 nm to 40 nm.…”

Section: Qdashes On (100) Inp Substratementioning

confidence: 99%

“…A strong staggered Qwire vertical arrangement was found for 10-25 nm SLT with increase in the Qwire size and reduction in PL linewidth to ~130 meV, while no correlation was observed between the SLT and Qwire formation beyond 25 nm which suggested no influence of dash layer on each other. These observations were attributed to the complex interdependence between phase separation, surface morphology, and mismatched stresses [179] within the structure.…”

Section: Qdashes On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…For InAs/InP heterostructures, the formation of QDashes can be observed especially when grown on InP(001) substrates, 20,21 whereas InAs/InP QDots of circular symmetry can be grown on higher index substrates such as InP(311)B.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

Jahan

Hermannstädter

Huh

et al. 2013

Journal of Applied Physics

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Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells J. Appl. Phys. 113, 073505 (2013) Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2×2 transfer-matrix algebra J. Appl. Phys. 113, 073502 (2013) Influence of structural anisotropy to anisotropic electron mobility in a-plane InN Appl. Phys. Lett. 102, 061904 (2013) Sub-250nm light emission and optical gain in AlGaN materials J. Appl. Phys. 113, 013106 (2013) Effects of pumping on propagation velocities of confined exciton polaritons in GaAs/AlxGa1−xAs double heterostructure thin films under resonant and non-resonant probe conditions J. Appl. Phys. 113, 013514 (2013) Additional information on J. Appl. Phys.

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Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)

Cited by 54 publications

References 14 publications

Recent TEM developments applied to quantum structures

Recent TEM developments applied to quantum structures

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates

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