Stacking Faults in SiC Nanowires

Kl, Wallis; Wieligor, Monika; Tw, Zerda; Stelmakh, S.; Gierlotka, S.; Pałosz, B.

doi:10.1166/jnn.2008.163

Cited by 9 publications

(14 citation statements)

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“…The space between two planes in Figure was about 0.25 nm which is concurrent with the calculated value in the 3C-SiC structure (0.251 nm). The stacking faults confirmed that the nanowires were grown by stacking the (111) lattice plane in the [111] direction. − …”

Section: Resultsmentioning

confidence: 70%

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Binding Waste Anthracite Fines with Si-Containing Materials as an Alternative Fuel for Foundry Cupola Furnaces

Huang¹,

Fox²,

Cannon³

et al. 2011

Environ. Sci. Technol.

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An alternative fuel to replace foundry coke in cupolas was developed from waste anthracite fines. Waste anthracite fines were briquetted with Si-containing materials and treated in carbothermal (combination of heat and carbon) conditions that simulated the cupola preheat zone to form silicon carbide nanowires (SCNWs). SCNWs can provide hot crushing strengths, which are important in cupola operations. Lab-scale experiments confirmed that the redox level of the Si-source significantly affected the formation of SiC. With zerovalent silicon, SCNWs were formed within the anthracite pellets. Although amorphous Si (+4) plus anthracite formed SiC, these conditions did not transform the SiC into nanowires. Moreover, under the test conditions, SiC was not formed between crystallized Si (+4) and anthracite. In a full-scale demonstration, bricks made from anthracite fines and zerovalent silicon successfully replaced a part of the foundry coke in a full-scale cupola. In addition to saving in fuel cost, replacing coke by waste anthracite fines can reduce energy consumption and CO2 and other pollution associated with conventional coking.

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Section: Resultsmentioning

confidence: 70%

“…The stacking faults confirmed that the nanowires were grown by stacking the (111) lattice plane in the [111] direction. [15][16][17] 3.4. Discussion on Different Binding Mechanisms.…”

Section: After Pyrolysismentioning

confidence: 99%

Binding Waste Anthracite Fines with Si-Containing Materials as an Alternative Fuel for Foundry Cupola Furnaces

Huang¹,

Fox²,

Cannon³

et al. 2011

Environ. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Synthesis of SiC NWs predominantly relies on the vapor-liquid-solid (VLS) growth mode. The list of reported synthesis techniques includes reaction of carbonsource gases with Si substrates, 5 pyrolysis of powders containing the source materials, [6][7][8] reaction of source gases with carbon nanotubes, 9,10 microwave heating-assisted physical vapor transport, 11 and chemical vapor deposition (CVD). [12][13][14] Various substrates have been used for SiC NW synthesis, including SiO 2 , [14][15][16] graphite, 6,8,17,18 poly-SiC, 12 etc.…”

Section: Introductionmentioning

confidence: 99%

Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

Krishnan

Thirumalai

Koshka

et al. 2011

Crystal Growth & Design

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SiC nanowires were grown on monocrystalline 4H-SiC wafers by chemical vapor deposition using the vapor-liquid-solid growth mode. The growth direction of the nanowires was dictated by the crystallographic orientation of the 4H-SiC substrates. Two distinct types of nanowires were obtained. The first type crystallized in the 3C polytype with the AE111ae nanowire axes. These nanowires grew at 20°with respect to the substrate c-planes and exhibited high densities of stacking faults on those {111} planes that are parallel to the substrate c-planes. The second type featured the 4H structure albeit with a strong stacking disorder. The stacking faults in these nanowires were perpendicular to the [0001] nanowire axes. Possible growth mechanisms that led to the formation of 3C and 4H polytypes are discussed.

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“…Figure 2E shows XRD patterns of the SiC NWs. The peaks at 36°, 41°, 60°, and 72° correspond to the (1 1 1), (2 0 0), (2 2 0), and (3 1 1) reflections of β‐SiC, and the peak at 33° is caused by stacking faults in β‐SiC 40,41 . After oxidation at 900°C, broad peak at 22° appeared, indicating the formation of amorphous SiO 2 oxide scale 40 .…”

Section: Resultsmentioning

confidence: 99%

Oxidation behavior of SiC nanowires: A nanowire radius‐dependent growth of oxide scale thickness

et al. 2022

J Am Ceram Soc.

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SiC nanowires (SiC NWs) possess both high thermal stability of SiC ceramic and one‐dimensional nanoscale features, which makes them highly attractive as reinforcements in ceramics or building units in resilient ceramic nanowires aerogels (NWAs) as well as blocks for electronic nanodevices. Understanding the oxidation behavior of SiC NWs at high temperatures is essential for their practical applications. Herein, we investigated the oxidation behavior of SiC NWs at 900–1200°C in air. Two oxidation stages were found, including an initial stage controlled by the reaction between oxygen and SiC at the SiO2/SiC interface and a subsequent oxygen diffusion–dependent stage. The oxide scale thickness was strongly influenced by the radius of the SiC NWs. With the increase of the NW radius from 40 to 120 nm, the oxidation activation energy of the oxidation process increases from 84.05 to 98.32 kJ/mol. The thermal insulation performances of SiC NWA, which is composed of SiC NWs, have been improved after oxidation. The evolution of the thermal insulation performance of SiC NWA during oxidation is consistent with the trends of the growth of the amorphous oxide layer, which indicates that exploring the oxidation kinetics is of great significance in understanding the high‐temperature behavior of SiC NW‐based materials. The present work provides insight into exploring the size effects on oxidation of SiC NWs, which may be helpful to further understanding the high‐temperature applications of SiC NWA.

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Stacking Faults in SiC Nanowires

Cited by 9 publications

References 0 publications

Binding Waste Anthracite Fines with Si-Containing Materials as an Alternative Fuel for Foundry Cupola Furnaces

Binding Waste Anthracite Fines with Si-Containing Materials as an Alternative Fuel for Foundry Cupola Furnaces

Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

Oxidation behavior of SiC nanowires: A nanowire radius‐dependent growth of oxide scale thickness

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