2006
DOI: 10.1016/j.jcrysgro.2006.04.005
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Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method

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Cited by 17 publications
(8 citation statements)
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“…Finally in case of sample heat treated at 900ºC (Figure 3. E), particles preserved the prismatic shape and from the high resolution scale (Figure 3.F); we have observed that some step or terrace like pattern formed over the surface of the nano particle with rhombohedral shape which can be attributed due to the formation of stacking fault like defect A similar type of stacking fault has also been observed in case of SiC crystal grown by spontaneous nucleation sublimation method [48] Figure 4.A shows the mean particle number size distribution of the nano particles synthesized at different annealing temperature. For the at 250ºC annealed samples, the width of the distribution was very broad in comparison to the samples annealed from 300°C to 900ºC.…”
Section: Resultssupporting
confidence: 74%
“…Finally in case of sample heat treated at 900ºC (Figure 3. E), particles preserved the prismatic shape and from the high resolution scale (Figure 3.F); we have observed that some step or terrace like pattern formed over the surface of the nano particle with rhombohedral shape which can be attributed due to the formation of stacking fault like defect A similar type of stacking fault has also been observed in case of SiC crystal grown by spontaneous nucleation sublimation method [48] Figure 4.A shows the mean particle number size distribution of the nano particles synthesized at different annealing temperature. For the at 250ºC annealed samples, the width of the distribution was very broad in comparison to the samples annealed from 300°C to 900ºC.…”
Section: Resultssupporting
confidence: 74%
“…The crystals used in the experiments are 6H-SiC (0001) wafers grown by the sublimation method in our laboratory. The crystal growth procedure has been described in detail elsewhere (Hu et al, 2006). For evaluating the crystal quality, [0001]-orientated 6H-SiC samples were imaged by SWBXT in transmission mode.…”
Section: Methodsmentioning
confidence: 99%
“…The 6H-SiC samples were grown by the sublimation method. The crystal growth procedure has been described in detail elsewhere (Hu et al, 2006). For microscopic observation, the as-grown crystal ingot was cut into h0001i-oriented wafers and then processed.…”
Section: Experimental Observationmentioning
confidence: 99%