Stacking fault energy of 6H-SiC and 4H-SiC single crystals

Hong, Moon-Hi; Samant, A. V.; Pirouz, P.

doi:10.1080/01418610008212090

Cited by 166 publications

(83 citation statements)

References 26 publications

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“…The characteristic double diffraction spots and streaks in the SAED pattern reveal the presence of twins and stacking faults, respectively. [43][44][45] No appreciable grain growth occurred during hot pressing as SiC and ZrB 2 grain sizes remain the same as those of the initial particles.…”

Section: Methodsmentioning

confidence: 97%

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite

Jayaseelan

Wang

Hilmas

et al. 2011

Advances in Applied Ceramics

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The polytypism of SiC, phase transformation of ZrB 2 and the interfaces between SiC and ZrB 2 were investigated using high resolution TEM in a hot pressed 10 vol.%SiC-ZrB 2 composite. In most cases, no grain boundary interphases between hexagonal ZrB 2 and 6H-SiC phases were observed with SiC being both inter-and intragranular. Occasionally, 6H-SiC transformed into 3C and 15R and hexagonal ZrB 2 transformed into cubic ZrB. High resolution TEM showed no grain boundary interphases in most regions. Energy dispersive X-ray spectroscopy and electron energy-loss spectroscopy analyses showed the presence of oxygen throughout the sample. The phase transformation of SiC and ZrB 2 , and the interphase formation between SiC and ZrB 2 grains are discussed.

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Section: Methodsmentioning

confidence: 97%

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite

Jayaseelan

Wang

Hilmas

et al. 2011

Advances in Applied Ceramics

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“…The diffraction spots streaks develop perpendicularly to the fault plane along the (0001) direction, indicating SFs are within the basal plane (0001). Such fault plane is common in HCP structure and is easy to generate in the sintering process due to its lower stacking faults energy (SFE) [39].…”

Section: Raman Spectroscopy Analysis Of Rb-sicmentioning

confidence: 99%

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Zhang

et al. 2017

Int J Adv Manuf Technol

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Surface and subsurface damages appear inevitably in the grinding process, which will influence the performance and lifetime of the machined components. In this paper, ultraprecision grinding experiments were performed on reactionbonded silicon carbide (RB-SiC) ceramics to investigate surface and subsurface damages characteristics and formation mechanisms in atomic scale. The surface and subsurface damages were measured by a combination of scanning electron microscopy (SEM), atomic force microscopy (AFM), raman spectroscopy, and transmission electron microscope (TEM) techniques. Ductile-regime removal mode is achieved below critical cutting depth, exhibiting with obvious plow stripes and pile-up. The brittle fracture behavior is noticeably influenced by the microstructures of RB-SiC such as impurities, phase boundary, and grain boundary. It was found that subsurface damages in plastic zone mainly consist of stacking faults (SFs), twins, and limited dislocations. No amorphous structure can be observed in both 6H-SiC and Si particles in RB-SiC ceramics. Additionally, with the aid of high-resolution TEM analysis, SFs and twins were found within the 6H-SiC closed packed plane, i.e., (0001). At last, based on the SiC structure characteristic, the formation mechanisms of SFs and twins were discussed, and a schematic model was proposed to clarify the relationship between plastic deformation-induced defects and brittle fractures.

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“…It has been reported that SiC has a very low SF energy. 6 Therefore, various kinds of SFs are expected to appear if the local stacking sequence is interrupted somewhat with respect to the host material.…”

mentioning

confidence: 99%

Evidence for a general mechanism modulating carrier lifetime in SiC

et al. 2010

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Stacking faults ͑SFs͒ in semiconductors are generally regarded as the electrically active defects that reduce the minority carrier lifetime. In contrast to this typical phenomenon, here we report that the SFs in SiC functionalize as the ideal quantum well ͑QW͒ structure for electrons. Due to the QW effect, an increase of minority carrier lifetime is observed at the SF regions. The reason for the lifetime increment is discussed with the electron dissipation along the SF plane. Our results suggest that this is a general mechanism regarding the increase of minority carrier lifetime at the defects.Stacking faults ͑SFs͒ are one of the most fundamental planar defects in crystalline solids. The SFs occur in a number of crystal structures, but the common example is in close-packed structures. In Si material, the SFs are usually formed on ͕111͖ planes by the application of a shear stress and are regarded as the electrically active defects. 1,2 In a compound semiconductor, such as SiC, the situation becomes complicated since SiC is known to have hundreds of different polytypes. 3-5 Especially, the polymorphism of SiC is particular in that all its different crystalline forms have a same atomic plane in common and differ only in the stacking sequence along the direction normal to this plane. It has been reported that SiC has a very low SF energy. 6 Therefore, various kinds of SFs are expected to appear if the local stacking sequence is interrupted somewhat with respect to the host material.Indeed, several types of SFs differing in the stacking arrangement have been already observed in SiC. 7-11 Since SiC is a promising wide-bandgap semiconductor aimed at highpower, high-frequency, and high-temperature applications, many investigations of the SFs are related to the devices ͑p-i-n diodes͒, such as the following aspects: ͑i͒ the degradation of SiC devices; 12,13 ͑ii͒ the nucleation sites of the SFs; 14-16 ͑iii͒ the driving force for the SF expansion under forward bias stressing; 17-19 ͑iv͒ partial dislocations ͑PDs͒ bounding the SFs 20-22 and ͑v͒ theoretical calculation of the electronic state of the SFs. 23-25 However, the fundamental/ intrinsic properties of the SFs in SiC have not been clarified very well. The clarification may provide fundamental knowledge of SF behavior in polytypic materials as well as further facilitate the understanding of SF effect on device properties.In this paper, we report on the intrinsic feature of the SFs in SiC. Different from the common feature in Si, we show that the SFs in SiC act as the ideal quantum-well ͑QW͒ structure for electrons. We also observe an increase of minority carrier lifetime at the SFs, which is not generally expected. We thus propose that the lifetime increment is associated with the QW-related "pump effect" dissipating the majority carriers, which would be a general mechanism regarding the increase of minority carrier lifetime at the defects.The common polytype of SiC, 4H, was used in this work. The 4H-SiC epi-films ͑6 m thick͒ were grown on the n + -type 4H-SiC ͑0001͒ off...

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Stacking fault energy of 6H-SiC and 4H-SiC single crystals

Cited by 166 publications

References 26 publications

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Evidence for a general mechanism modulating carrier lifetime in SiC

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Stacking fault energy of 6H-SiC and 4H-SiC single crystals

Cited by 166 publications

References 26 publications

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB2composite

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB2composite

Experimental investigation on the surface and subsurface damages characteristics and formation mechanisms in ultra-precision grinding of SiC

Evidence for a general mechanism modulating carrier lifetime in SiC

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Product

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TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite

TEM investigation of hot pressed ‐10 vol.%SiC–ZrB₂composite