Stacked HZO/α-In<sub>2</sub>Se<sub>3</sub> Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Huo, Jiali; Zhang, Zhaohao; Zhang, Yadong; Zhang, Fan; Yan, Gangping; Tian, Guoliang; Xu, Hai; Zhan, Guohui; Xu, Gaobo; Zhang, Qingzhu; Wu, Zhenhua

doi:10.1109/ted.2023.3269403

Cited by 5 publications

(3 citation statements)

References 29 publications

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“…By employing a dual gate structure, bilayer with a ferroelectric dielectric, or heterostructure configuration, the memory characteristics can be enhanced. [38,44,45] The mechanism that enables the implementation of memory characteristics can be explained by the OOP polarization switching of the In 2 Se 3 layer induced by an external electrical field. When using a relatively thick SiN x /SiO 2 dielectric of 65/50 nm, partial polarization near the front channel of the In 2 Se 3 layer can be induced.…”

Section: Nonvolatile Memory Characteristics Of In 2 Se 3 Fes-fetmentioning

confidence: 99%

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Lim,

Lee,

Kim

et al. 2023

Advanced Materials

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In2Se3, 2D ferroelectric‐semiconductor, is a promising candidate for next‐generation memory device because of its outstanding electrical properties. However, the large‐area manufacturing of In2Se3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large‐area In2Se3 thin film. A polycrystalline γ‐In2Se3 layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In2Se3 ferroelectric‐semiconductor field effect transistor (FeS‐FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS‐FET exhibits an electron field effect mobility of 0.97 cm2 V−1 s−1 and an on/off current ratio of >107 in the transfer curves. The memory behavior of the large‐area, In2Se3 FeS‐FETs for next‐generation memory is demonstrated.

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Section: Nonvolatile Memory Characteristics Of In 2 Se 3 Fes-fetmentioning

confidence: 99%

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Lim,

Lee,

Kim

et al. 2023

Advanced Materials

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“…14 These interesting properties have resulted in significant scientific interest of In 2 Se 3 in diverse potential applications such as solar cells, 15 photodetectors, 16 thermoelectric materials, 9 phase random access memories, 17,18 and ferroelectric devices. 19 Despite the growing interest in the physical properties and device applications of In 2 Se 3 , the crystal structures of In 2 Se 3 polymorphs are of profound importance for understanding the versatile physical properties.…”

Section: Introductionmentioning

confidence: 99%

“…In 2 Se 3 with an archetypical layered structure − exhibits a wide range of physical properties, including ferroelectricity, − thermoelectricity, , anisotropic photoconductivity, , ultraflat electronic bands, and a strong contrast in electrical properties across its different phases . These interesting properties have resulted in significant scientific interest of In 2 Se 3 in diverse potential applications such as solar cells, photodetectors, thermoelectric materials, phase random access memories, , and ferroelectric devices . Despite the growing interest in the physical properties and device applications of In 2 Se 3 , the crystal structures of In 2 Se 3 polymorphs are of profound importance for understanding the versatile physical properties.…”

Section: Introductionmentioning

confidence: 99%

Crystal Structure and Chemical Bonding of Layered α-In₂Se₃

Li,

Luo,

Zhang

et al. 2023

J. Phys. Chem. C

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Layered α-In 2 Se 3 has found widespread applications in the electronic, optoelectronic, and thermoelectric fields. However, the crystal structure of α-In 2 Se 3 , which plays a fundamental role in understanding its diverse physical properties, remains poorly explored. In this study, we present a comprehensive analysis of the temperature-dependent evolution of lattice constants, fractional coordinates, and atomic displacement parameters of α(3R)-In 2 Se 3 using high-resolution synchrotron powder X-ray diffraction. The temperature range of investigation spans from 114.2 to 472.2 K. From temperature-dependent cell parameters, the linear thermal expansion coefficients along the aaxis and c-axis at room temperature are determined as 0.71 × 10 −5 K −1 and 1.83 × 10 −5 K −1 , respectively, giving rise to a marked anisotropy owing to the weak interlayer interactions along the c-axis. Through modeling of isotropic atomic displacement parameters, the Debye temperature is evaluated to be 173 K, showing good agreement with the result by fitting the low-temperature heat capacity data. Furthermore, we conduct chemical bonding analysis within the quantum theory of atoms in molecules and reveal that α(3R)-In 2 Se 3 exhibits polar covalent intralayer bonds with weak van der Waals interlayer interaction.

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2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects

Leblanc,

Song,

Jariwala

2024

Current Opinion in Solid State and Materials Science

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Stacked HZO/α-In₂Se₃ Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Cited by 5 publications

References 29 publications

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Crystal Structure and Chemical Bonding of Layered α-In₂Se₃

2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects

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Stacked HZO/α-In2Se3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Cited by 5 publications

References 29 publications

Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Crystal Structure and Chemical Bonding of Layered α-In2Se3

2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects

Contact Info

Product

Resources

About

Stacked HZO/α-In₂Se₃ Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Crystal Structure and Chemical Bonding of Layered α-In₂Se₃