Stacked high voltage switch based on SiC VJFETs

Friedrichs, Peter; Mitlehner, H.; Schörner, Reinhold; Dohnke, Karl Otto; Elpelt, Rudolf; Stephani, D.

doi:10.1109/ispsd.2003.1225249

Cited by 26 publications

(11 citation statements)

References 3 publications

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“…When the Si-MOSFET is turned off, the sourcegate bias of the first JFET increases until pinch off occurs driving the first JFET into off-state. The drain voltage of the first JFET continues to increase until the first clamping diode avalanches, tying the second JFET gate to a predetermined voltage, driving it into off-state, and likewise for the remaining 3 JFETs in a domino fashion [8]. Figure 7 shows the supercascode in forward conduction mode where a total RDSon of 226 m is exhibited for a gate-source voltage of V GS =10 V. Figure 8 shows the blocking behavior of the supercascode using clamping diodes with an avalanche voltage of 1.2 kV, where the leakage above 6 kV demonstrates the last JFET entering avalanche mode.…”

Section: Single Device Vs Super-cascode Discussionmentioning

confidence: 99%

6.5 kV SiC normally-off JFETs — Technology status

Hostetler

Alexandrov

et al. 2014

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications

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Large area 6.5 kV normally-off JFETs and JBS diodes have been developed for high DC-link voltage applications. The basic performance characteristics are examined along with the switching behavior using double pulse testing at 3 kV, 11A with an inductive load. In addition, a performance comparison between the single 6.5 kV JFET and a 6.0 kV super-cascode approach, built from stacking five normally-on 1.2 kV JFETs, is presented. The technology readiness level of each approach is discussed.

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Section: Single Device Vs Super-cascode Discussionmentioning

confidence: 99%

6.5 kV SiC normally-off JFETs — Technology status

Hostetler

Alexandrov

et al. 2014

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications

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“…It works at frequencies around 1-20 kHz [5]. For this type of converter SiC-JFETs can be used [10,11,12,13], but is not the object of this paper to study in depth this matter.…”

Section: Dc-dc Converter Controllermentioning

confidence: 99%

DC / DC converters as DC circuit-breakers in HVDC networks operation

Carrizosa

Cortes²,

Benchaib

et al. 2014

2014 16th European Conference on Power Electronics and Applications

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This paper presents the modeling and control of a DC/DC bidirectional converter suitable for medium voltage and power applications in Multi-Terminals HVDC (MT-HVDC) grids. Moreover its use as DC circuit-breaker is described. This is a new concept, against the contemporary studies of DC breakers, which could help for the implementation of MT-HVDC networks. The proposed multilevel topology is based on Dual Active Bridge (DAB). The overall control of the DC/DC converter is achieved by using a nonlinear control based in Lyapunov theory.

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“…To date, the hybrid SiC/Si cascode configuration has been the most successful three terminal SiC power switch [15,16]. Hybrid cascode switches with a blocking capability of 4 kV and a specific on-resistance of 45 mX cm 2 have been demonstrated, showing very good on-and off-state performance as well as fast switching and excellent short circuit behaviour [17]. To extend even further their blocking capability, a stacked solution has been proposed [18].…”

Section: Normally-on Jfetsmentioning

confidence: 99%

“…Hybrid cascode switches with a blocking capability of 4 kV and a specific on-resistance of 45 mX cm 2 have been demonstrated, showing very good on-and off-state performance as well as fast switching and excellent short circuit behaviour [17]. To extend even further their blocking capability, a stacked solution has been proposed [18]. Four vertical JFETs have been connected in series, controlled by a low side 50 V Si MOSFET.…”

Section: Normally-on Jfetsmentioning

confidence: 99%