Stack of two III-nitride laser diodes interconnected by a tunnel junction

Siekacz, M.; Muzioł, G.; Hajdel, Mateusz; Żak, Mikołaj; Nowakowski-Szkudlarek, Krzesimir; Turski, Henryk; Sawicka, Marta; Wolny, P.; Feduniewicz-Żmuda, Anna; Stanczyk, Szymon; Moneta, Joanna; Skierbiszewski, C.

doi:10.1364/oe.27.005784

Cited by 32 publications

(15 citation statements)

References 26 publications

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“…The reference device is a blue light emitting laser diode featuring two InGaN single-quantum well active regions that are separated by an InGaN tunnel junction (Siekacz et al 2019). A second tunnel junction is grown on top for uniform carrier injection.…”

Section: Device Detailsmentioning

confidence: 99%

“…The primary reason lies in the passivation of Mg acceptors by hydrogen and the need for post-growth activation of p-type conductivity through thermal annealing, which removes hydrogen. On the other hand, plasma-assisted molecular beam epitaxy (PAMBE), which is a hydrogenfree technology, recently led to GaN-based bipolar cascade lasers with more than 100% differential quantum efficiency, which is the quantum efficiency above lasing threshold (Siekacz et al 2019). A rather unique feature of this laser is the employment of unusually wide InGaN quantum wells (QWs, see Tab.…”

Section: Introductionmentioning

confidence: 99%

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GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Piprek¹,

Muzioł

Siekacz

et al. 2022

Opt Quant Electron

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Utilizing self-consistent numerical simulation in good agreement with measurements, we analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide InGaN quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quantum levels. However, internal absorption, low p-cladding conductivity, and self-heating are shown to strongly limit the laser performance.

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Section: Device Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaN-based bipolar cascade lasers with 25 nm wide quantum wells

Piprek¹,

Muzioł

Siekacz

et al. 2022

Opt Quant Electron

Self Cite

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“…The reference device is a blue light emitting laser diode featuring two InGaN single-quantum well active regions that are separated by an InGaN tunnel junction. 7 A second tunnel junction is grown on top for uniform carrier injection. The full layer structure of the active region is given in Tab.…”

Section: Device Detailsmentioning

confidence: 99%

“…The primary reason lies in the passivation of Mg acceptors by hydrogen and the need for post-growth activation of p-type conductivity through thermal annealing, which removes hydrogen. On the other hand, plasma-assisted molecular beam epitaxy (PAMBE), which is a hydrogen-free technology, recently led to GaNbased bipolar cascade lasers with more than 100% differential quantum efficiency, 7 which is the quantum efficiency above lasing threshold. A rather unique feature of this laser is the employment of very thick InGaN quantum wells (QWs, see Tab.…”

Section: Introductionmentioning

confidence: 99%

GaN-Based Bipolar Cascade Lasers with 25nm Wide Quantum Wells

Piprek¹,

Muzioł

Siekacz

et al. 2021

Preprint

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“…This is probably due to difficulties with Mg acceptors activation in buried p-type layers. Making use of the PAMBE technology we already demonstrated that it is possible to grow monolithically a stack of two LDs operating at two different wavelengths [17].…”

Section: Introductionmentioning

confidence: 99%

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

et al. 2020

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We demonstrate the applications of tunnel junctions (TJs) for new concepts of monolithic nitride-based multicolor light emitting diode (LED) and laser diode (LD) stacks. The presented structures were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN bulk crystals. We demonstrate a stack of four LDs operated at pulse mode with emission wavelength of 453 nm. The output power of 1.1 W and high slope efficiency of 2.3 W/A is achieved for devices without dielectric mirrors. Atomically flat surface after the epitaxy of four LD stack and low dislocation density is measured as a result of proper TJ design with optimized doping level. The strain compensation design with InGaN waveguides and AlGaN claddings is shown to be crucial to avoid cracking and lattice relaxation of the 5 µm thick structure. Vertical connection of n-LDs allows for cascade emission of photons and increases the quantum efficiency n-times. The two-color (blue and green) LEDs are demonstrated. Application of TJs simplifies device processing, reducing the need for applications of p-type contact. The key factor enabling demonstration of such devices is hydrogen-free PAMBE technology, in which activation of buried p-type layers is not necessary.

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Stack of two III-nitride laser diodes interconnected by a tunnel junction

Cited by 32 publications

References 26 publications

GaN-based bipolar cascade lasers with 25 nm wide quantum wells

GaN-based bipolar cascade lasers with 25 nm wide quantum wells

GaN-Based Bipolar Cascade Lasers with 25nm Wide Quantum Wells

Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions

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