Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature

Tong, Lei; Huang, Xinyu; Wang, Peng; Ye, Lei; Peng, Meng; An, Licong; Sun, Qiaodong; Zhang, Yong; Yang, Guoqing; Li, Zheng; Zhong, Fang; Wang, Fang; Wang, Yixiu; Motlag, Maithilee; Wu, Wenzhuo; Cheng, Gary J.; Hu, Weida

doi:10.1038/s41467-020-16125-8

Cited by 317 publications

(270 citation statements)

References 49 publications

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“…Mid‐wavelength infrared (MWIR) photodetectors are associated with significant applications such as infrared polarization imaging, [ 1 ] remote sensing, [ 2 ] free space telecommunications, [ 3 ] IR spectroscopy [ 4 ] and lidar, [ 5 ] which is of particular scientific significance and technical guidance for infrared physics technology. Traditional MWIR photodetectors including indium antimonide (InSb), [ 6 ] mercury cadmium telluride (HgCdTe) [ 7 ] and quantum‐well structures based on group III to V materials, [ 8 ] face some major challenges.…”

Section: Figurementioning

confidence: 99%

“…Due to the excellent polarization photoelectric performance of the device, a single‐pixel reflective polarization imaging of NbS 3 photodetector was performed (Figure S16a, Supporting Information). [ 1,67 ] The imaging target is an Au pattern obtained by electron beam lithography and thermal evaporation (Figure S16b,c, Supporting Information). Figure 5c shows polarization‐dependent visible images measured at 637 nm illumination at 0° and 90° polarization angles, respectively.…”

Section: Figurementioning

confidence: 99%

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Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Wang

et al. 2020

Advanced Materials

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Low‐symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low‐symmetry narrow‐bandgap 2D materials will be rewarding for the development of nanoelectronics and nano‐optoelectronics. Herein, sulfide niobium (NbS3), a novel transition metal trichalcogenide semiconductor with low‐symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS3 with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS3 Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10−25 A2 Hz−1), photoelectrical dichroic ratio (1.84) and high‐quality reflective polarization imaging (637 nm and 830 nm). A room‐temperature specific detectivity exceeding 107 Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low‐symmetry narrow‐bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid‐infrared optoelectronic applications.

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Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Wang

et al. 2020

Advanced Materials

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“…Photogating is an effect that originates from trapping of photoinduced carriers at defect sites and/or interfaces, which in turn promotes delayed carrier recombination, leading to an extremely high photogain and subsequently resulting in enhanced photosensitivity of the detector, thereby eliminating the cooling requirements. [ 10–20 ]…”

Section: Figurementioning

confidence: 99%

Ultralow‐Transition‐Energy Organic Complex on Graphene for High‐Performance Shortwave Infrared Photodetection

et al. 2020

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Room‐temperature, high‐sensitivity, and broadband photodetection up to the shortwave infrared (SWIR) region is extremely significant for a wide variety of optoelectronic applications, including contamination identification, thermal imaging, night vision, agricultural inspection, and atmospheric remote sensing. Small‐bandgap semiconductor‐based SWIR photodetectors generally require deep cooling to suppress thermally generated charge carriers to achieve increased sensitivity. Meanwhile, the photogating effect can provide an alternative way to achieve superior photosensitivity without the need for cooling. The optical photogating effect originates from charge trapping of photoinduced carriers at defects or interfaces, resulting in an extremely high photogain (106 or higher). Here, a highly sensitive SWIR hybrid photodetector, fabricated by integrating an organic charge transfer complex on a graphene transistor, is reported. The organic charge transfer complex (tetrathiafulvalene–chloranil) has an exceptional low‐energy intermolecular electronic transition down to 0.5 eV, with the aim of achieving efficient SWIR absorption for wavelengths greater than 2 µm. The photogating effect at the organic complex and graphene interface enables an extremely high photogain and a high detectivity of ≈1013 Jones, along with a response time of 8 ms, at room temperature for a wavelength of 2 µm.

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“…Graphene is considered as a promising material for photodetectors because of its unique properties of extremely high carrier mobility and ultra-broadband photoresponse [1][2][3][4][5][6]. However, the low optical absorption and short carrier lifetime usually lead to a low photoelectric response for monolayer graphene devices [7].…”

Section: Introductionmentioning

confidence: 99%

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Jiang

Nie

et al. 2020

Nanophotonics

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AbstractThe hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity. However, the responsivity (or gain) was increased at the expense of response time. In this paper, we devise a mechanism which can obtain an enhanced responsivity and fast response time simultaneously by manipulating the photogating effect (MPE). This concept is demonstrated by using a graphene/silicon-on-insulator (GSOI) hybrid structure. An ultrahigh responsivity of more than 107 A/W and a fast response time of 90 µs were obtained. The specific detectivity D* was measured to be 1.46 ⨯ 1013 Jones at a wavelength of 532 nm. The Silvaco TCAD modeling was carried out to explain the manipulation effect, which was further verified by the GSOI devices with different doping levels of graphene in the experiment. The proposed mechanism provides excellent guidance for modulating carrier distribution and transport, representing a new route to improve the performance of graphene/semiconductor hybrid photodetectors.

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Stable mid-infrared polarization imaging based on quasi-2D tellurium at room temperature

Cited by 317 publications

References 49 publications

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Air‐Stable Low‐Symmetry Narrow‐Bandgap 2D Sulfide Niobium for Polarization Photodetection

Ultralow‐Transition‐Energy Organic Complex on Graphene for High‐Performance Shortwave Infrared Photodetection

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

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