1999
DOI: 10.1016/s0039-6028(99)00086-2
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Stabilization of the rhombohedral polytype in MoS2 and WS2 microtubes: TEM and AFM study

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Cited by 59 publications
(45 citation statements)
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“…Its wall consisting of three molecular layers is in agreement with our assumption of the preferential 3R polytypic structure. The indications for the high-pressure 3R polytype, which is stable in plane geometry at pressures above 4 Gpa, [15] but has been found also in large-diameter MoS 2 nanotubes, [16,17] enables an insight into the growth condition in the confined geometry of a MoS 2 nanotube reactor. Resonance Raman spectrum (Fig.…”
Section: By Maja Remškar* Aleš Mrzel Marko Viršek and Adolf Jesihmentioning
confidence: 90%
“…Its wall consisting of three molecular layers is in agreement with our assumption of the preferential 3R polytypic structure. The indications for the high-pressure 3R polytype, which is stable in plane geometry at pressures above 4 Gpa, [15] but has been found also in large-diameter MoS 2 nanotubes, [16,17] enables an insight into the growth condition in the confined geometry of a MoS 2 nanotube reactor. Resonance Raman spectrum (Fig.…”
Section: By Maja Remškar* Aleš Mrzel Marko Viršek and Adolf Jesihmentioning
confidence: 90%
“…[67] The polytypic stacking of molecular layers in nanotubes with diameters above 2 lm (rhombohedral 3R stacking) was found to differ from that in nanotubes with diameters below 100 nm (hexagonal 2Hb stacking). [68] The selected-area diffraction on the microtube wall revealing the rhombohedral (3R) stacking, otherwise stable at elevated pressure above 4 GPa, provides indirect evidence of the presence of strain incorporated into the microtube wall (Fig. 3).…”
Section: Stacking Order and Helicity In Nanotube Latticesmentioning
confidence: 99%
“…Since NiS x is a degenerate semiconductor with almost metal-like conductivity [49], one has to expect that the photovoltaic properties of a heterojunction solar cells with such absorber films are disturbed by these NiS x inclusions, for instance by short circuiting the front and back contacts [50].…”
mentioning
confidence: 99%