Stabilization of single-electron pumps by high magnetic fields

Fletcher, J. D.; Kataoka, M.; Giblin, S. P.; Park, Sunghun; Sim, Hyun Sub; See, P.; Ritchie, D. A.; Griffiths, J. P.; Jones, G. A. C.; Beere, Harvey E.; Janssen, T. J. B. M.

doi:10.1103/physrevb.86.155311

Cited by 50 publications

(47 citation statements)

References 24 publications

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“…W (5) and (6) in [123]). For tunnelling, a single-electron WKB approximation for one-dimensional rectangular barrier leads to an estimate of ∆ b as [124,125] …”

Section: Theory Backgroundmentioning

confidence: 99%

“…Linear effect of gating on electron energies and exponential effect on charge exchange rates motivates the following functional dependencies: .7) and (3.8) can be either treated as phenomenological constants [68,146,147,156] or calculated from the electrostatics [52] or microscopic modelling [125] under the assumptions outlined in Section 3.1. For example, parametric pumping with tunneling rates Γ independent of n. However, energy-dependence of the entrance barrier sharpness parameter ∆ b [159] or additional conductance paths (e.g, charge traps or isolated donors) may lead to n-dependent α n 's.…”

Section: Pumping Currentsmentioning

confidence: 99%

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Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

2015

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Precise manipulation of individual charge carriers in nanoelectronic circuits underpins practical applications of their most basic quantum property -the universality and invariance of the elementary charge. A charge pump generates a net current from periodic external modulation of parameters controlling a nanostructure connected to source and drain leads; in the regime of quantized pumping the current varies in steps of qef as function of control parameters, where qe is the electron charge and f is the frequency of modulation. In recent years, robust and accurate quantized charge pumps have been developed based on semiconductor quantum dots with tunable tunnel barriers. These devices allow modulation of charge exchange rates between the dot and the leads over many orders of magnitude and enable trapping of a precise number of electrons far away from equilibrium with the leads. The corresponding non-adiabatic pumping protocols focus on understanding of separate parts of the pumping cycle associated with charge loading, capture and release. In this report we review realizations, models and metrology applications of quantized charge pumps based on tunable-barrier quantum dots.

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“…W (5) and (6) in [123]). For tunnelling, a single-electron WKB approximation for one-dimensional rectangular barrier leads to an estimate of ∆ b as [124,125] …”

Section: Theory Backgroundmentioning

confidence: 99%

Section: Pumping Currentsmentioning

confidence: 99%

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

2015

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“…This ability to manipulate individual electrons leads to several applications. Metrologists have pursued electron-counting standards for capacitance [1,2] and current [3][4][5][6][7][8][9][10] since the realization of SEDs. Others have worked to perform logic or memory applications with SEDs because of the prospect for doing so at very low power [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Stability of Single Electron Devices: Charge Offset Drift

Stewart

Zimmerman

2016

Applied Sciences

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Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information. Success in each application ultimately requires exceptional performance, uniformity, and stability from SEDs which is currently unavailable. In this review, we discuss a time instability of SEDs that occurs at low frequency ( 1 Hz) called charge offset drift. We review experimental work which shows that charge offset drift is large in metal-based SEDs and absent in Si-SiO 2 -based devices. We discuss the experimental results in the context of glassy relaxation as well as prospects of SED device applications.

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“…2(b) and 2(e) we show P N ðV G2L Þ for 0 N 3, obtained from sets of 500 cycles for each V G2L using the slow and fast loading waveforms, respectively. As expected from DC measurements with the pump in a magnetic field, 5,7,8,20 there are a series of wide plateaus where one value of N dominates the loading statistics. This is highlighted by color-coding data points black when all the cycles yielded the same value of N. Comparable data have been presented previously, 9 but at zero magnetic field where the regime of very accurate loading could not be accessed.…”

mentioning

confidence: 74%

“…A magnetic field was applied perpendicular to the plane of the 2-DEG to enhance the current quantization. 5,7,8,20 Our measurement protocol is illustrated by schematic potential diagrams in Fig. 1(c).…”

mentioning

confidence: 99%

High-resolution error detection in the capture process of a single-electron pump

Giblin

See

A.Petrie

et al. 2016

Applied Physics Letters

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The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for 1/f noise in the QPC current, and repeating the protocol more than 10 6 times, we are able to resolve errors with probabilities of order 10 −6 . For the studied sample, one-electron capture is affected by errors in ∼ 30 out of every million cycles, while two-electron capture was performed more than 10 6 times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps.

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Stabilization of single-electron pumps by high magnetic fields

Cited by 50 publications

References 24 publications

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress

Stability of Single Electron Devices: Charge Offset Drift

High-resolution error detection in the capture process of a single-electron pump

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