Stability of Lithium Niobate on Irradiation at Elevated Temperature

Primak, William; Gavin, A.P.; Anderson, T. T.; Monahan, Emmet

doi:10.13182/nt77-a31961

Cited by 7 publications

(5 citation statements)

References 10 publications

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“…Primak et al [130] reported that irradiated LN becomes highly disordered and shows loss of piezoelectric response and optical birefringence at a fluence of 8 × 10 19 cm −2 . This process of destruction of LN was found to be significantly reduced when the LN sensors were kept at ≈800 K during the irradiation [131].…”

Section: Neutron Irradiation Induced Defectsmentioning

confidence: 96%

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Unveiling the Defect Structure of Lithium Niobate with Nuclear Methods

Kling

Marques

2021

Crystals

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X-ray and neutron diffraction studies succeeded in the 1960s to determine the principal structural properties of congruent lithium niobate. However, the nature of the intrinsic defects related to the non-stoichiometry of this material remained an object of controversial discussion. In addition, the incorporation mechanism for dopants in the crystal lattice, showing a solubility range from about 0.1 mol% for rare earths to 9 mol% for some elements (e.g., Ti and Mg), stayed unresolved. Various different models for the formation of these defect structures were developed and required experimental verification. In this paper, we review the outstanding role of nuclear physics based methods in the process of unveiling the kind of intrinsic defects formed in congruent lithium niobate and the rules governing the incorporation of dopants. Complementary results in the isostructural compound lithium tantalate are reviewed for the case of the ferroelectric-paraelectric phase transition. We focus especially on the use of ion beam analysis under channeling conditions for the direct determination of dopant lattice sites and intrinsic defects and on Perturbed Angular Correlation measurements probing the local environment of dopants in the host lattice yielding independent and complementary information.

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Section: Neutron Irradiation Induced Defectsmentioning

confidence: 96%

“…The interest in the behavior of LN-based acoustical devices close to the core of a nuclear fission reactor started in the 1970s [128][129][130][131]. Materials close to a reactor core are exposed to neutrons from the fission of 235 U and to gamma radiation [132].…”

Section: Neutron Irradiation Induced Defectsmentioning

confidence: 99%

Unveiling the Defect Structure of Lithium Niobate with Nuclear Methods

Kling

Marques

2021

Crystals

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“…Researchers urgently need to find some new functional materials with intrinsic resistance to irradiation for aerospace applications. As a synthetic crystal material with excellent corrosion resistance, low-temperature resistance and radiation resistance, LiNbO 3 single crystals exhibit a bright prospect for space platform applications [ 12 , 13 , 14 ]. Generally, traditional methods including magnetron sputtering and pulsed laser deposition can only obtain polycrystalline or poor-quality LiNbO 3 films [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

The Wafer-Level Integration of Single-Crystal LiNbO3 on Silicon via Polyimide Material

Yang

Geng

et al. 2021

Micromachines

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In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (≤100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature (≈ −263.15 °C), which meets the bonding strength requirements of aerospace applications.

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“…The harsh environment such as low temperature and irradiation in outer space puts a huge test on the stability and lifetime of these MEMS devices [5][6][7][8][9]. LiNbO 3 single-crystal has received extensive attention in the aerospace field owing to its low-temperature resistance and intrinsic radiation resistance [10][11][12]. Silicon (Si) is the most commonly used substrate material with excellent mechanical, electrical, and thermal properties, and its processing technology is compatible with the CMOS process [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

et al. 2021

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An integration technology for wafer-level LiNbO3 single-crystal thin film on Si has been achieved. The optimized spin-coating speed of PI (polyimide) adhesive is 3500 rad/min. According to Fourier infrared analysis of the chemical state of the film baked under different conditions, a high-quality PI film that can be used for wafer-level bonding is obtained. A high bonding strength of 11.38 MPa is obtained by a tensile machine. The bonding interface is uniform, completed and non-porous. After the PI adhesive bonding process, the LiNbO3 single-crystal was lapped by chemical mechanical polishing. The thickness of the 100 mm diameter LiNbO3 can be decreased from 500 to 10 μm without generating serious cracks. A defect-free and tight bonding interface was confirmed by scanning electron microscopy. X-ray diffraction results show that the prepared LiNbO3 single-crystal thin film has a highly crystalline quality. Heterogeneous integration of LiNbO3 single-crystal thin film on Si is of great significance to the fabrication of MEMS devices for in-situ measurement of space-sensing signals.

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Stability of Lithium Niobate on Irradiation at Elevated Temperature

Cited by 7 publications

References 10 publications

Unveiling the Defect Structure of Lithium Niobate with Nuclear Methods

Unveiling the Defect Structure of Lithium Niobate with Nuclear Methods

The Wafer-Level Integration of Single-Crystal LiNbO3 on Silicon via Polyimide Material

Integration Technology for Wafer-Level LiNbO3 Single-Crystal Thin Film on Silicon by Polyimide Adhesive Bonding and Chemical Mechanical Polishing

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