The Wafer-Level Integration of Single-Crystal LiNbO3 on Silicon via Polyimide Material

Abstract

In situ measurements of sensing signals in space platforms requires that the micro-electro-mechanical system (MEMS) sensors be located directly at the point to be measured and in contact with the subject to be measured. Traditional radiation-tolerant silicon-based MEMS sensors cannot acquire spatial signals directly. Compared to silicon-based structures, LiNbO3 single crystalline has wide application prospects in the aerospace field owing to its excellent corrosion resistance, low-temperature resistance and radiation resistance. In our work, 4-inch LiNbO3 and LiNbO3/Cr/Au wafers are fabricated to silicon substrate by means of a polyimide bonding method, respectively. The low-temperature bonding process (≤100 °C) is also useful for heterostructure to avoid wafer fragmentation results from a coefficient of thermal expansion (CTE) mismatch. The hydrophilic polyimide surfaces result from the increasing of -OH groups were acquired based on contact angle and X-ray photoelectron spectroscopy characterizations. A tight and defect-free bonding interface was confirmed by scanning electron microscopy. More importantly, benefiting from low-temperature tolerance and radiation-hardened properties of polyimide material, the bonding strength of the heterostructure based on oxygen plasma activation achieved 6.582 MPa and 3.339 MPa corresponding to room temperature and ultra-low temperature (≈ −263.15 °C), which meets the bonding strength requirements of aerospace applications.