Stability of diamond/Si bonding interface during device fabrication process

Liang, Jianbo; Masuya, Satoshi; Kim, Seongwoo; Oishi, Toshiyuki; Kasu, Makoto; Shigekawa, Naoteru

doi:10.7567/1882-0786/aaeedd

Cited by 32 publications

(23 citation statements)

References 23 publications

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“…We found that the amorphous layer thickness decreased with increasing annealing temperature. According to our previous report, the amorphous layer disappeared, and a SiC intermediate layer was formed at the diamond/Si bonding interface after annealing at 1000 °C [20]. The compressive stress was increased in the Si of the bonding interface with the annealing temperature higher than 800 °C, which should be related to the structure change of the amorphous layer formed at the bonding interface.…”

Section: Resultsmentioning

confidence: 67%

“…We previously reported that the direct bonding of diamond and Si by surface activated bonding (SAB) at room temperature [19]. We demonstrated diamond/Si bonding interface with a full contact area of 4 × 4 mm 2 and good thermal stability at temperature of 1000 °C for 12 h [20]. Furthermore, we also demonstrated the fabrication of diamond field-effect transistor on the diamond bonded to Si.…”

Section: Introductionmentioning

confidence: 76%

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Annealing effect of surface-activated bonded diamond/Si interface

Liang

Zhou

Masuya

et al. 2019

Diamond and Related Materials

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Highlights•Diamond/Si bonding interface could withstand a load of high temperature as high as 800 °C.•The amorphous layer observed at the bonding interface decreased with annealing temperature.•The residual stress released in the diamond of the bonding interface decreased with annealing temperature.•The residual stress formed in the bonding interface annealed at 1000˚C is much smaller than that of diamond grown on Si.

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Section: Resultsmentioning

confidence: 67%

Section: Introductionmentioning

confidence: 76%

Annealing effect of surface-activated bonded diamond/Si interface

Liang

Zhou

Masuya

et al. 2019

Diamond and Related Materials

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“…The room temperature bonding of diamond and GaN using a silicon amorphous layer by SAB method has been demonstrated [9,10]. In addition, the room temperature direct bonding of diamond and Si using the SAB method has also been reported [11,12]. In SAB, the substrate surfaces are activated by Ar fast-atom beam irradiation under ultra-high vacuum conditions, and then the activated surfaces are contacted together by applying pressure.…”

Section: Introductionmentioning

confidence: 99%

Room temperature direct bonding of diamond and InGaP in atmospheric air

et al. 2021

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a new technique of diamond and inGaP room temperature bonding in atmospheric air is reported. Diamond substrate cleaned with h 2 sO 4 /h 2 O 2 mixture solution is bonded to inGaP exposed after removing the Gaas layer by the h 2 sO 4 /h 2 O 2 /h 2 O mixture solution. the bonding interface is free from interfacial voids and mechanical cracks. an atomic intermixing layer with a thickness of about 8 nm is formed at the bonding interface, which is composed of c, in, Ga, P, and O atoms. after annealing at 400 °c, no exfoliation occurred along the bonding interface. an increase of about 2 nm in the thickness of the atomic intermixing layer is observed, which plays a role in alleviating the thermal stress caused by the difference of the thermal expansion coefficient between diamond and inGaP. the bonding interface demonstrates high thermal stability to device fabrication processes. this bonding method has a large potential for bonding large diameter diamond and semiconductor materials.

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“…It has been reported that the thermal expansion coefficient of the composite material composed of Cu and diamond highly depends on the component ratio between diamond and Cu, decreasing with increasing amounts of the diamond component. 39 The composite layer played a role in relieving the residual stress generated by the difference in the thermal expansion coefficients between diamond and Cu. Similar results have been reported for a diamond/Si interface fabricated by SAB, wherein a SiC intermediate layer was formed at the 1000 °C-annealed interface to play a role in relaxing the residual stress.…”

Section: Uncertainties Of Tbr (mentioning

confidence: 99%

Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

Liang

Ohno

Yamashita

et al. 2020

ACS Appl. Nano Mater.

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The microstructures of Cu/diamond interfaces prepared by surface-activated bonding at room temperature are examined by cross-sectional scanning transmission electron microscopy (STEM). A crystalline defect layer composed of Cu and diamond with a thickness of approximately 4.5 nm is formed at the as-bonded interface, which is introduced by irradiation with an Ar beam during the bonding process. No crystalline defect layer is observed at the 700 °C-annealed interface, which is attributed to the recrystallization of the defect layer due to the high-temperature annealing process.Instead of the defect layer, a mating interface layer and a copper oxide layer are formed at the interface.The mating interface layer and the copper oxide layer play a role in relieving the residual stress caused by the different thermal expansion coefficients of diamond and Cu. The thermal boundary resistance (TBR) of the as-bonded interface is measured to be 1.7± 0.2×10 -8 m 2 K/W by the time domain pulsedlight-heating thermoreflectance technique, and this value is virtually the same as the theoretical calculation value. These results indicate that the direct bonding of diamond and Cu is a very effective technique for improving the heat-dissipation performance of power devices.

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Stability of diamond/Si bonding interface during device fabrication process

Cited by 32 publications

References 23 publications

Annealing effect of surface-activated bonded diamond/Si interface

Annealing effect of surface-activated bonded diamond/Si interface

Room temperature direct bonding of diamond and InGaP in atmospheric air

Characterization of Nanoscopic Cu/Diamond Interfaces Prepared by Surface-Activated Bonding: Implications for Thermal Management

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