Stability of diamond/Si bonding interface during device fabrication process

Abstract

Diamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The FET exhibits clear saturation and pinch-off characteristics. A 5-nm-thick SixCx-1 layer was formed at the

Direct Integration of Polycrystalline Diamond With 3C‐SiC for Enhanced Thermal Management in GaN HEMTs: Impact of Grain Structure and Interface Engineering

“…The presence of these ordered structures suggests partial crystallization of the previously amorphous interface, indicating an annealing-induced transition toward a more thermodynamically stable phase. A similar transformation has also been observed at the 3C-SiC/SCD and Si/SCD interfaces after annealing at high temperatures, [30,56,57] further supporting the role of annealing in promoting structural evolution and crystallization at the bonded interface. This transformation results in the forming of a SiC polycrystalline layer at the interface.…”

Direct Integration of Polycrystalline Diamond With 3C‐SiC for Enhanced Thermal Management in GaN HEMTs: Impact of Grain Structure and Interface Engineering

“…The presence of these ordered structures suggests partial crystallization of the previously amorphous interface, indicating an annealing-induced transition toward a more thermodynamically stable phase. A similar transformation has also been observed at the 3C-SiC/SCD and Si/SCD interfaces after annealing at high temperatures, [30,56,57] further supporting the role of annealing in promoting structural evolution and crystallization at the bonded interface. This transformation results in the forming of a SiC polycrystalline layer at the interface.…”

Fabrication of β -Ga 2 O 3 /Si heterointerface and characterization of interfacial structures for high-power device applications

“…However, we found that after annealing at 1000 °C, the thickness of the atomic intermixing layer was significantly increased. This behavior differs from that in the directly bonded GaAs/InP, 38) Si/diamond, 39) and Si/SiC 24) heterointerfaces, in which the thickness of the atomic intermixing layer disappeared after annealing at an optimum temperature. We speculate that the annealing temperature of 1000 °C might be too high for the Ga 2 O 3 substrate.…”

Annealing effect of surface-activated bonded diamond/Si interface

“…We found that the amorphous layer thickness decreased with increasing annealing temperature. According to our previous report, the amorphous layer disappeared, and a SiC intermediate layer was formed at the diamond/Si bonding interface after annealing at 1000 °C [20]. The compressive stress was increased in the Si of the bonding interface with the annealing temperature higher than 800 °C, which should be related to the structure change of the amorphous layer formed at the bonding interface.…”

“…We previously reported that the direct bonding of diamond and Si by surface activated bonding (SAB) at room temperature [19]. We demonstrated diamond/Si bonding interface with a full contact area of 4 × 4 mm 2 and good thermal stability at temperature of 1000 °C for 12 h [20]. Furthermore, we also demonstrated the fabrication of diamond field-effect transistor on the diamond bonded to Si.…”

Direct Integration of Polycrystalline Diamond With 3C‐SiC for Enhanced Thermal Management in GaN HEMTs: Impact of Grain Structure and Interface Engineering

“…The presence of these ordered structures suggests partial crystallization of the previously amorphous interface, indicating an annealing-induced transition toward a more thermodynamically stable phase. A similar transformation has also been observed at the 3C-SiC/SCD and Si/SCD interfaces after annealing at high temperatures, [30,56,57] further supporting the role of annealing in promoting structural evolution and crystallization at the bonded interface. This transformation results in the forming of a SiC polycrystalline layer at the interface.…”

Fabrication of β -Ga 2 O 3 /Si heterointerface and characterization of interfacial structures for high-power device applications

“…However, we found that after annealing at 1000 °C, the thickness of the atomic intermixing layer was significantly increased. This behavior differs from that in the directly bonded GaAs/InP, 38) Si/diamond, 39) and Si/SiC 24) heterointerfaces, in which the thickness of the atomic intermixing layer disappeared after annealing at an optimum temperature. We speculate that the annealing temperature of 1000 °C might be too high for the Ga 2 O 3 substrate.…”

Annealing effect of surface-activated bonded diamond/Si interface

“…We found that the amorphous layer thickness decreased with increasing annealing temperature. According to our previous report, the amorphous layer disappeared, and a SiC intermediate layer was formed at the diamond/Si bonding interface after annealing at 1000 °C [20]. The compressive stress was increased in the Si of the bonding interface with the annealing temperature higher than 800 °C, which should be related to the structure change of the amorphous layer formed at the bonding interface.…”

“…We previously reported that the direct bonding of diamond and Si by surface activated bonding (SAB) at room temperature [19]. We demonstrated diamond/Si bonding interface with a full contact area of 4 × 4 mm 2 and good thermal stability at temperature of 1000 °C for 12 h [20]. Furthermore, we also demonstrated the fabrication of diamond field-effect transistor on the diamond bonded to Si.…”

Direct Integration of Polycrystalline Diamond With 3C‐SiC for Enhanced Thermal Management in GaN HEMTs: Impact of Grain Structure and Interface Engineering

“…The presence of these ordered structures suggests partial crystallization of the previously amorphous interface, indicating an annealing-induced transition toward a more thermodynamically stable phase. A similar transformation has also been observed at the 3C-SiC/SCD and Si/SCD interfaces after annealing at high temperatures, [30,56,57] further supporting the role of annealing in promoting structural evolution and crystallization at the bonded interface. This transformation results in the forming of a SiC polycrystalline layer at the interface.…”

Fabrication of β -Ga 2 O 3 /Si heterointerface and characterization of interfacial structures for high-power device applications

“…However, we found that after annealing at 1000 °C, the thickness of the atomic intermixing layer was significantly increased. This behavior differs from that in the directly bonded GaAs/InP, 38) Si/diamond, 39) and Si/SiC 24) heterointerfaces, in which the thickness of the atomic intermixing layer disappeared after annealing at an optimum temperature. We speculate that the annealing temperature of 1000 °C might be too high for the Ga 2 O 3 substrate.…”

Annealing effect of surface-activated bonded diamond/Si interface

“…We found that the amorphous layer thickness decreased with increasing annealing temperature. According to our previous report, the amorphous layer disappeared, and a SiC intermediate layer was formed at the diamond/Si bonding interface after annealing at 1000 °C [20]. The compressive stress was increased in the Si of the bonding interface with the annealing temperature higher than 800 °C, which should be related to the structure change of the amorphous layer formed at the bonding interface.…”

“…We previously reported that the direct bonding of diamond and Si by surface activated bonding (SAB) at room temperature [19]. We demonstrated diamond/Si bonding interface with a full contact area of 4 × 4 mm 2 and good thermal stability at temperature of 1000 °C for 12 h [20]. Furthermore, we also demonstrated the fabrication of diamond field-effect transistor on the diamond bonded to Si.…”