Stability of 71° stripe domains in epitaxial BiFeO<sub>3</sub> films upon repeated electrical switching

Johann, Florian; Morelli, Alessio; Vrejoiu, Ionela

doi:10.1002/pssb.201248329

Cited by 18 publications

(14 citation statements)

References 30 publications

(76 reference statements)

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“…To fabricate films with 109° domains, the deposition was performed on bare TbScO 3 substrates. For obtaining 71° domains, the substrates were annealed in a tube furnace at 950 °C for 2 h along with an oxygen flow of ~200 sccm 1 25 .…”

Section: Methodsmentioning

confidence: 99%

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

et al. 2013

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Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (Voc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, Voc as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.

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Section: Methodsmentioning

confidence: 99%

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

et al. 2013

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“…We note that the deviation of the average value is relatively high because each nanocapacitor shows very different switching characteristics (see Figures S3–S5 in the Supporting Information). Nonetheless, the remnant polarization charge densities are within the reasonable range of 50–80 µC cm −2 obtained by the macroscopic P – E measurement . Note that the investigation of the polarization charge as well as the P – E hysteresis loop was performed by conventional CAFM and PFM setups without additional corrections or circuits to reduce parasitic capacitance …”

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confidence: 52%

Direct Probing of Polarization Charge at Nanoscale Level

et al. 2017

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based on the detection of the polarization switching current. [7][8][9] However, owing to an important long-term development for reducing the sizes of the electronic devices, the preparation of ferroelectric materials such as nanostructures and thin films is entering nanometer-scale regime and accordingly it requires the investigation of the ferroelectricity at the nanoscale level. Even though piezoresponse force microscopy (PFM) has been used extensively to explore nanoscale ferroelectricity over the past two decades, [10][11][12] it was recently revealed that several nonferroelectric effects, e.g., the electrostatic effect and electrochemical strain, can also contribute to the PFM response, which often leads to a misinterpretation of the measured PFM response. [13][14][15] In particular, it was reported that PFM hysteresis loops can be generated even in nonferroelectric materials. [16,17] Furthermore, new types of ferroelectric materials, e.g., HfO 2 -based materials, [18][19][20] have been recently studied by many different research groups and industries to gain a fundamental understanding as well as to investigate practical applications of new ferroelectrics. Considering the current situation, an alternative approach is necessary to examine the existence of the ferroelectricity at the nanoscale level.In this study, we demonstrate the direct probing of a polarization charge at the nanoscale level using a combination of conventional conductive atomic force microscopy (CAFM) and PFM. It has been generally accepted that the detection of polarization charge using a conventional CAFM setup without a top Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. Accordingly, to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. However, the detection is unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negativedown method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm −2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The obtained results show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale. Polarization ChargeFerroelectric materials possess spontaneous...

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“…19 Growth details of the BFO thin film and its crystallinity investigation by XRD are given elsewhere. 20 The 3D orientation of the BFO film polarization vectors were determined by PFM and used as a reference to compare with SEM results.…”

Section: Resultsmentioning

confidence: 99%

Back-scattered electron visualization of ferroelectric domains in a BiFeO3 epitaxial film

Alyabyeva

Ouvrard

Lindfors‐Vrejoiu

et al. 2017

Applied Physics Letters

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Three-dimensional orientation of the ferroelectric (FE) domain structure of a BiFeO3 epitaxial film was investigated by scanning electron microscopy (SEM) using back-scattered electrons and piezoresponse-force microscopy (PFM). By changing the crystallographic orientation of the sample and the electron collection angle relative to the detector, we establish a link between the orientation of polarization vectors (out-of-plane and in-plane) in BiFeO3 film and the backscattered electron image contrast in agreement with PFM investigations. The different FE polarization states in the domains correspond to altered crystalline environments for the impingent primary beam electrons. We postulate that the resultant back-scattered electron domain contrast arises as the result of either differential absorption (through a channelling effect) or through back-diffraction from the sample which leads to a projected diffraction pattern superposed with the diffuse conventional back-scattered electron intensity. We demonstrate that SEM can be sensitive for both out-of-plane and in-plane polarization directions using BSE detection mode and can be used as a non-destructive and fast method to determine 3D FE polarization orientation of domains.

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Stability of 71° stripe domains in epitaxial BiFeO₃ films upon repeated electrical switching

Cited by 18 publications

References 30 publications

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Direct Probing of Polarization Charge at Nanoscale Level

Back-scattered electron visualization of ferroelectric domains in a BiFeO3 epitaxial film

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Stability of 71° stripe domains in epitaxial BiFeO3 films upon repeated electrical switching

Cited by 18 publications

References 30 publications

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Direct Probing of Polarization Charge at Nanoscale Level

Back-scattered electron visualization of ferroelectric domains in a BiFeO3 epitaxial film

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Stability of 71° stripe domains in epitaxial BiFeO₃ films upon repeated electrical switching