The formation of an ultra-thin aluminum oxide film at Fe0.85Al0.15(110) surface (A2 random alloy) has been studied by a variety of surface sensitive techniques (X-ray photoemission, low-energy electron diffraction, surface X-ray diffraction and scanning tunneling microscopy) supplemented by ab initio atomistic simulations. Since iron is not oxidized in the used conditions, the study focused on the coupling between aluminum oxidation and segregation processes. Compared to the bare surface, whose average composition (Fe0.6Al0.4) is closer to the B2-CsCl structure over a ∼ 3 nm depth, the oxidation hardly affects the subsurface segregation of aluminum. All the structural and chemical fingerprints point to an oxide film similar to that found on NiAl(110). It is a bilayer (∼ 7.5Å thick) with a composition close to Al10O13 and a large (18.8 × 10.7)Å 2 nearly rectangular unit cell; an almost perfect match between substrate periodicity and the (1 × 2) oxide supercell is found. Nevertheless, microscopy reveals the presence of anti-phase domain boundaries. Measured Al 2p and O 1s core level shifts match calculated ones; their origin and the relative contributions of initial/final state effects are discussed. The ubiquity of the present oxide on different supports asks for the origin of its stability.
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We have demonstrated pressure-induced transition in a c-axis oriented V2O3 thin film from strongly correlated metal to Mott insulator in a submicrometric region by inducing a local stress using contact atomic force microscopy. To have an access to a pressure range of sub-gigapascal, a tip with a large radius of 335 nm was prepared by chemical vapour deposition of platinum onto a commercial tip with a focused ion beam (FIB). The FIB-modified tip gives a good electrical contact at low working pressures (0.25-0.4 GPa) allowing unambiguously to evidence reversible metalinsulator transition in a pulsed laser-deposited V2O3 thin film by means of local investigations of current-voltage characteristics. A finite element method has confirmed that the diminution of c/a ratio under this tip pressure explains the observed phase transition of the electron density of states in the film.
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