Stability limits for the horizontal ribbon growth of silicon crystals

Daggolu, Parthiv; Yeckel, Andrew; Bleil, C.E.; Derby, Jeffrey J.

doi:10.1016/j.jcrysgro.2012.10.024

Cited by 24 publications

(22 citation statements)

References 21 publications

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“…In addition, our analyses demonstrated that fast growth requires large wedge factors and that growth rates are limited by nonlinear interactions manifested by physical failure mechanisms. We further explore instabilities and failure mechanisms of the HRG system in a companion paper [42].…”

Section: Discussionmentioning

confidence: 99%

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Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals

Daggolu

Yeckel

Bleil³

et al. 2012

Journal of Crystal Growth

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Section: Discussionmentioning

confidence: 99%

“…To accommodate a larger range of pinning angles, we have prescribed a crucible corner with a dihedral angle of f ¼ 351 in our base-case configuration. Pinning is examined in more detail as a failure mechanism during HRG in a companion paper [42] to the present analysis.…”

Section: Velocity Field and Meniscimentioning

confidence: 99%

Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals

Daggolu

Yeckel

Bleil³

et al. 2012

Journal of Crystal Growth

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“…8 Daggolu analyzed the thermal capillary action, stable growth state, and solute segregation of HRG via numerical analysis. [9][10][11] Weinstein simulated the evolution of the melt crystallization interface in a large melt growth system. 12 More recently, numerical simulations of the heat transfer, melt convection and capillary effects problems have been analysed during the HRG process.…”

Section: Introductionmentioning

confidence: 99%

Simulating the horizontal growth process of silicon ribbon

et al. 2018

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In this paper, we present a solidification growth model that primarily describes the principal components of horizontal ribbon growth process, but also discusses the interaction between fluid flow and heat transfer, crystallization dynamics, and the effects of oxygen impurity distribution in melts, particularly with respect to the morphology of the interface. The effects of the jet cooling rate, pulling speed, and transfer coefficient on solute transport were studied. The results showed that a higher jet velocity produces a sharper temperature gradient at the interface and a stronger Marangoni effect, facilitates solute transport in the silicon melt, and promotes higher oxygen concentration in crystal. The stronger Marangoni convection causes more rapid oxygen transfer in the silicon melt and a higher oxygen concentration. Solidification front increases the downward flow velocity of the eddy current as the pulling speed is increased; this leads to a decrease in solute concentration at the interface. An increase in the downward flow of the vortex confluence facilitates the reduction of solute concentration in the crystal. An increase in the upward flow of the vortex confluence will increase the concentration in the crystal. The oxygen concentration is concentrated at the top and bottom of the silicon ribbon.

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“…Past studies [11,12,15,17] have shown that, because of the viscosity, pulling rate, and heat extraction on the surface, an unstable meniscus forms on the underside of the silicon crystal at the edge of the crucible. Consequently, the unstable meniscus generates a heat imbalance in the growth process, which thus results in an irregular lower surface.…”

Section: Analytical Modelmentioning

confidence: 99%

Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal

Shen

Sun

et al. 2018

Crystals

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Abstract:We present a novel horizontal ribbon growth (HRG) process and a theoretical analysis of this method. Assuming that the existence of the meniscus is defined by diffuse growth, we determine analytically the thickness and height of the meniscus and an explicit expression for the performance of meniscus under different conditions. We then calculate the thermal profile in melt part, as well as the conditions under which the undercooling is sufficient around the solidification point. We find that diffuse growth is more sensitive to small initial thickness, and find the minimum length of the melt part to obtain undercooling. Finally, we calculate the change rule of solidification position by a variational approach, as well as the stability of the process under different conditions. We also give an expression to the instability of past HRG methods.

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Stability limits for the horizontal ribbon growth of silicon crystals

Cited by 24 publications

References 21 publications

Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals

Thermal-capillary analysis of the horizontal ribbon growth of silicon crystals

Simulating the horizontal growth process of silicon ribbon

Modeling and Analysis of Novel Horizontal Ribbon Growth of Silicon Crystal

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