Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature

Moschetti, Giuseppe; Thome, Fabian; Ohlrogge, Matthias; Goliasch, Jens; Schafer, F.; Aja, B.; Leuther, A.; Schlechtweg, M.; Seelmann‐Eggebert, M.; Ambacher, O.; Wieching, G.; Kotiranta, Mikko

doi:10.1109/tmtt.2016.2598168

Cited by 18 publications

(13 citation statements)

References 22 publications

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“…Moreover, high inductive source degeneration decreases the gain per stage and the amount of inductance needed increases for shorter fingers. However, HEMTs with high finger numbers can become unstable, especially under cryogenic conditions [29], [30], and due to their distributed nature, the device can behave nonideally. In the amplifier, transistors with a total gate width of 4 × 40 μm have been chosen.…”

Section: Cryogenic Lna Mmic Designmentioning

confidence: 99%

“…broadband noise and power matching in the K u-band with sufficiently low effective gate-line resistance. Airbridges are used to connect the two-transistor drain electrodes to ensure stability at cryogenic temperatures according to [29]. Furthermore, the stability of the circuit at various reflection coefficients at the amplifier input and output has been checked by simulating the reflections at each transistor port according to [31].…”

Section: Cryogenic Lna Mmic Designmentioning

confidence: 99%

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A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Heinz

Thome

Leuther

et al. 2021

IEEE Trans. Microwave Theory Techn.

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This article reports on the investigation and optimization of cryogenic noise mechanisms in InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with a gate length of 100, 50, and 35 nm are characterized both under room temperature and cryogenic conditions. Furthermore, two additional technology variations with 50-nm gate length are investigated to decompose different noise mechanisms in HEMTs. Therefore, cryogenic extended K u-band low-noise amplifiers of the investigated technologies are presented to benchmark their noise performance. Technology C with a 50-nm gate length exhibits an average effective noise temperature of 4.2 K between 8 and 18 GHz with a minimum of 3.3 K when the amplifier is cooled to 10 K. The amplifier provides an average gain of 39.4 dB at optimal noise bias. The improved noise performance has been achieved by optimization of the epitaxial structure of the 50-nm technology, which leads to low gate leakage currents and high gain at low drain current bias. To the best of the authors' knowledge, this is the first time that an average noise temperature of 4.2 K has been demonstrated in the K u-band.

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Section: Cryogenic Lna Mmic Designmentioning

confidence: 99%

Section: Cryogenic Lna Mmic Designmentioning

confidence: 99%

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

Heinz

Thome

Leuther

et al. 2021

IEEE Trans. Microwave Theory Techn.

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“…They are based on discrete 50-nm gate length methamorphic high-electron mobility technology transistors from Fraunhofer IAF. 34,35 They are three-stage amplifiers covering the whole frequency band. A photograph of the amplifier without cover is depicted in Fig.…”

Section: Cryogenic Low Noise Amplifiersmentioning

confidence: 99%

10- to 19.5-GHz microwave receiver of an electro-optical interferometer for radio astronomy

Aja

Fuente

Artal

et al. 2019

J. Astron. Telesc. Instrum. Syst.

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This document describes the analysis, design, and prototype test results of the microwave section of a 10-to 19.5-GHz interferometer, aimed at obtaining polarization data of cosmic microwave background (CMB) radiation from the sky. First, receiver analysis is thoroughly assessed to study the contribution of each subsystem when obtaining the Stokes parameters of an input signal. Then, the receiver design is detailed starting from the front-end module, which works at cryogenic temperature, composed of a set of passive components: feedhorn, orthomode transducer, and polarizer, together with active components, such as very low-noise amplifiers. The back-end module (BEM) is directly connected, working at room temperature for further amplification, phase switching, and correlation of the signals. Moreover, the whole frequency band is split into two sub-bands (10 to 14 GHz and 16 to 20 GHz) using a high selective diplexer in the BEM in order to reject radiofrequency interferences. Phase switches allow phase difference steps of 5.625 deg, which modulate the correlated outputs to reduce systematic effects in the postdetection signal processing. Finally, measurements of all the subsystems comprising the microwave section of the receiver as well as the characterization of the complete microwave receiver are presented. The obtained results demonstrate successful performance of the microwave receiver that, together with an electro-optical correlator and a near-infrared camera, comprises the interferometer. Moreover, synthesized images corresponding to combinations of the Stokes parameters can be obtained with the whole system.

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“…Many studies have been devoted to the analysis of the temperature effects on the performance of the HEMT devices, focusing on both GaAs [9][10][11][12][13][14][15][16][17][18] and GaN [18][19][20][21][22][23][24][25][26][27][28][29][30][31] semiconductor technologies. The present article is aimed at an experimental investigation of the behavior of various HEMT technologies in highand low-temperature conditions.…”

Section: Introductionmentioning

confidence: 99%

Measurement-based Investigation of the DC and RF Transconductance for Various HEMT Technologies in High-and Low-temperature Conditions

Alim

Jarndal

Gaquière

et al. 2021

Preprint

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The purpose of this experimental study is to evaluate quantitatively the impact of the temperature on the behavior of various high electron-mobility transistor (HEMT) technologies through the analysis of the DC and RF transconductance. The experimental data are reported for six different HEMT devices, in order to develop a comparative analysis based on various technologies, including gallium arsenide (GaAs) and gallium nitride (GaN) materials, matched and pseudomorphic HEMTs, single- (S-H) and double-heterojunction (D-H) HEMTs, and both virgin and multi-layer devices. The reported findings show that the impact of the ambient temperature on the HEMT behavior strongly depend on the tested technology and operating conditions. As a matter of fact, a higher temperature can lead to increased or degraded transconductance, depending on the device technologies and bias point. In the GaAs-based devices, an operating bias condition at which the DC and RF transconductance are temperature insensitive can be defined, owing to two-opposite temperature-dependent effects counteracting with each other.

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Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature

Cited by 18 publications

References 22 publications

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

10- to 19.5-GHz microwave receiver of an electro-optical interferometer for radio astronomy

Measurement-based Investigation of the DC and RF Transconductance for Various HEMT Technologies in High-and Low-temperature Conditions

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