SrPd, a candidate material with extremely large magnetoresistance

Abstract

The extremely large magnetoresistance (XMR) effect in nonmagnetic semimetals have attracted intensive attention recently. Here we propose an XMR candidate material SrPd based on firstprinciples electronic structure calculations in combination with a semi-classical model. The calculated carrier densities in SrPd indicate that there is a good electron-hole compensation, while the calculated intrinsic carrier mobilities are as high as 10 5 cm 2 V −1 s −1 . There are only two doubly degenerate bands crossing the Fermi level for SrPd, thus a semi-classical two-band model is available for describing its transport properties. Accordingly, the magnetoresistance of SrPd under a magnetic field of 4 Tesla is predicted to reach 10 5 % at low temperature. Furthermore, the calculated topological invariant indicates that SrPd is topologically trivial. Our theoretical studies suggest that SrPd can serve as an ideal platform to examine the charge compensation mechanism of the XMR effect.

Quantum Catalytic Performance for the Hydrogen Evolution Reaction and the Ethanol Oxidation Reaction in Topological Edge States of SrPd and BaPd Semimetal Monolayers: A Theoretical Study

“…The above computational results are in good agreement with the experimental ones. 48 The (l00) crystal plane can be used to construct SrPd and BaPd monolayers. The optimized SrPd monolayer structure, yielding the lattice constants a = 4.40 Å and b = 4.10 Å, is shown in Figure 1b.…”

A two-dimensional topological nodal-line material MgN4 with extremely large magnetoresistance

“…16, Guo and coworkers well explained the nonsaturating quadratic XMR found in both trivial semimetal LaSb and topological nontrivial semimetal LaBi as well as the resistivity plateau at very low temperatures using the semiclassical two-band model, revealing the criticality of the electron–hole carrier compensation to accurately understand the XMR phenomena found in experiments despite the topological properties. From a classical carrier compensation scenario, for materials with charge-compensated properties ( n = n e = n h ) originating from two intersecting energy bands near the Fermi level, the electrical resistivity can be expressed as, 4,16,55,56 in which B is the external magnetic field perpendicular to the current direction. It should be noted that B appears as a free parameter in the semiclassical model, whose effect on the carrier mobilities is ignored.…”

“…The mechanism underlying the XMR effect is still an ongoing research project. Topologically nontrivial electronic structures, 19,20 the electron-hole carrier compensation, 4,6,16,53 a field-induced change in the Fermi surface, 21 field-induced metal-insulator transition, 54 and open-orbit Fermi surface topology 25 have all been considered as possible origins of the XMR effect. In ref.…”

“…In recent years, an extremely large magnetoresistance (XMR) effect, which is unlike the conventional magnetoresistance phenomenon, has been discovered and it immediately attracted numerous studies due to its potential excellent performance in memory devices and spintronics applications. 1–11 The resistivity of the XMR material increases as the square of the magnetic field, and it can be as high as 10 3 %–10 8 % order without any saturated signal until ultra-high magnetic fields. 12…”

“…In recent years, an extremely large magnetoresistance (XMR) effect, which is unlike the conventional magnetoresistance phenomenon, has been discovered and it immediately attracted numerous studies due to its potential excellent performance in memory devices and spintronics applications. [1][2][3][4][5][6][7][8][9][10][11] The resistivity of the XMR material increases as the square of the magnetic field, and it can be as high as 10 3 %-10 8 % order without any saturated signal until ultra-high magnetic fields. 12 Certain materials have been found to show the XMR effect, 3,6,[13][14][15][16][17][18][19][20][21][22][23][24][25] many of which are topologically nontrivial semimetals, such as Dirac semimetals Cd 3 As 2 , 19 Na 3 Bi, 20 and NbSb 2 , 21 and Weyl semimetals WTe 2 6,[22][23][24] and TaAs.…”