Sputtering yields, range and range straggling in Al following Kr+ ions bombardment in the energy range (20–160)keV

Mammeri, S.; Ouichaoui, S.; Zemih, R.; Ammi, H.; Abdesselam, M.; Chami, A.C.

doi:10.1016/j.nimb.2005.06.108

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…7 in function of incident ion beam fluence. As in our previous work [25], this quantity was obtained from the following relation:…”

Section: Sem Edx and Xrd Analysesmentioning

confidence: 99%

“…The experimental procedure used, summarized in a previous paper [25], is described in more details in Section 2. The studied Bi samples have been analyzed both in thickness and surface state evolution using four complementary techniques, as described in Sections 2 and 3, i.e., Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and X-ray diffraction (XRD) spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

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Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions

Mammeri

Ouichaoui

Ammi

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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“…7 in function of incident ion beam fluence. As in our previous work [25], this quantity was obtained from the following relation:…”

Section: Sem Edx and Xrd Analysesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions

Mammeri

Ouichaoui

Ammi

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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“…Therefore, phonons can come from several sources. Sputtering is a process where the near-surface atoms are removed from the target due to the bombardment by energetic ions or particles [7]. Therefore, when the target atom receives energy higher than its surface binding energy from the cascade, the atom maybe sputtered.…”

Section: Resultsmentioning

confidence: 99%

Simulation of ionizing radiation induced effects in nanoscale semiconductor material

Chee

Amir

Salleh

2011

2011 IEEE Regional Symposium on Micro and Nano Electronics

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Study for defect in semiconductors induced by ionizing radiation has become much more sophisticated in this recent year, driven by the current development in the ongoing miniaturization of silicon (Si) semiconductor industry. In this paper, the damage evolution due to Cobalt-60 (Co-60) is being simulated in nanoscale Silicon layer using SRIM (Stopping and Range of Ions in Matter). SRIM is a computer simulation that uses Monte Carlo method and it contains TRIM (The Range of Ions in Matter) calculation. The SRIM-TRIM calculates the range of ions in matter using collisions of ions-atoms. Besides, the radiation tolerance of the silicon layer is compared when its thickness is scaling down to nano dimension. From the findings, it is observed that the penetration of Co-60 ions into the target silicon layer leads to production of lattice defects in the form of vacancies, defect clusters and dislocations. These can alter the material parameters and hence the properties of the devices. The simulation results also show that nanoscale silicon layer features improved radiation robustness against ionizing radiation, in term of displacement damage.

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Note on the artefacts in SRIM simulation of sputtering

Shulga

2018

Applied Surface Science

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Sputtering yields, range and range straggling in Al following Kr+ ions bombardment in the energy range (20–160)keV

Cited by 4 publications

References 16 publications

Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions

Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions

Simulation of ionizing radiation induced effects in nanoscale semiconductor material

Note on the artefacts in SRIM simulation of sputtering

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