Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions

Mammeri, S.; Ouichaoui, S.; Ammi, H.; Zemih, R.

doi:10.1016/j.nimb.2009.10.183

Cited by 9 publications

(19 citation statements)

References 43 publications

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“…Beside the main objective of performing quantitative measurements of the induced surface effects in Bi, we attempted to understand the experimental observations by highlighting, following other groups, the above ion-surface interaction mechanisms that are still being debated. For comparison to previous measurements and interpreting the observed (moderate) SHI irradiation effects, we will also refer to our recent works on similar Bi thin films irradiated by keV Ar + ions [17,18]. In those experiments, the sputtering yield data and other observed Bi surface effects were satisfactorily interpreted by primarily invoking interaction mechanisms supporting the generation of linear elastic collision cascades [2,19].…”

Section: Introductionmentioning

confidence: 58%

“…Then, in a subsequent step, the irradiated samples were analyzed in thickness by RBS spectroscopy for evaluating the sputter yields (see Section 3 and Ref. [17]). The RBS analyses were conducted using a 2-MeV 4 He + ion beam delivered by the 5.5-MV Van de Graaff accelerator of the iThemba Labs with mean current intensity of $40 nA.…”

Section: Methodsmentioning

confidence: 99%

“…Backscattered alpha particles were detected by means of a well collimated surface barrier Si detector, placed 11 cm apart the Bi/Si target sample at 165°relative to the primary beam direction. The absolute uncertainties in the measured sputtering yields were estimated as in reference [17]. They essentially resulted from errors propagating in ion fluence expression (amounting to $20%) and errors in the target sample areal densities (ranging only between 1% and 3%), and amount, at most, to $25%.…”

Section: Methodsmentioning

confidence: 99%

“…2, this initial mean value reduces linearly by $4% up to 7% with increasing incident ion fluence. As proceeded in reference [17], the mean rate of removed Bi material or mean sputtering yield, Y, was directly determined from the fitcurve to the Bi areal density difference versus ion fluence, given by:…”

Section: Sputtering Yield Comparison To Theorymentioning

confidence: 99%

“…In the following we, first, succinctly report (in Section 2) on the general experimental method, set up and techniques used described in more detail elsewhere [17,18]. Then, we present and discuss (in Section 3) the obtained experimental results before giving a summary and concluding (in Section 4).…”

Section: Introductionmentioning

confidence: 99%

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Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Mammeri

Ouichaoui

Ammi

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionmentioning

confidence: 58%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Sputtering Yield Comparison To Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Mammeri

Ouichaoui

Ammi

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

Mammeri

Msimanga

Dib

et al. 2017

Surface & Interface Analysis

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The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by swift Cu q+ heavy ions (q = +4 to +7) was investigated by varying both the ion energy over the 10 to 26-MeV range and the ion fluence ϕ from 5.1 × 10 13 cm −2 to 3.4 × 10 15 cm −2 . The sputtering yields were determined experimentally via the Rutherford backscattering spectrometry technique using a 2-MeV He + ion beam. The measured sputtering yields versus Cu 7+ ion fluence for a fixed incident energy of 26 MeV exhibit a significant depression at very low ϕ-values flowed by a steady-state regime above~1.6 × 10 14 cm −2 , similarly to those previously pointed out for Bi thin films irradiated by MeV heavy ions. By fixing the incident ion fluence to a mean value of~2.6 × 10 15 cm −2 in the upper part of the yield saturation regime, the measured sputtering yield data versus ion energy were found to increase with increasing the electronic stopping power in the Bi target material. Their comparison to theoretical predicted models is discussed. A good agreement is observed between the measured sputtering yields and the predicted ones when considering the contribution of 2 competitive processes of nuclear and electronic energy losses via, respectively, the SRIM simulation code and the inelastic thermal spike model using refined parameters of the ion slowing down with reduced thermophysical proprieties of the Bi thin films. KEYWORDS electronic sputtering yield, nuclear and electronic stopping power, Rutherford backscattering spectrometry (RBS), inelastic thermal spike model, sss

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Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Boubir

Mammeri²,

Dib³

et al. 2021

Surface & Interface Analysis

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The sputtering of silicon dioxide (SiO2/Si) thin films deposited onto silicon substrates and irradiated by swift Auq+ heavy ions (q = +4 to +9) has been investigated both by experiment and via numerical modeling by varying the kinetic energy from 10 to 40 MeV. The induced sputtering yields were determined experimentally via the Rutherford backscattering spectrometry (RBS) technique using a 2‐MeV He+ ion beam. The obtained experimental results were first plotted versus the target electronic stopping power together with previous data available for the same projectile‐target system at high kinetic energies, indicating increased sputtering yields with increasing electronic energy loss. Then, the whole data were compared with numerical sputtering yield values derived both from the inelastic thermal spike model and the SRIM‐2013 simulation code by including, respectively, nonlinear elastic spikes and linear elastic collision cascades. A good agreement was observed between the measured sputtering yield data and i‐TS predicted values over higher incident energies used by using refined parameters of the ion slowing down with reduced thermophysical properties of the SiO2 thin film. Finally, the synergy between electronic and nuclear energy loss processes inducing sputtering at low incident energies was discussed through the comparison between experimental and numerical yield data.

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Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions

Cited by 9 publications

References 43 publications

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

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Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20–160keV Ar+ ions

Cited by 9 publications

References 43 publications

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

Experimental study and thermal spike modeling of sputtering in SiO2 thin films under MeV Auq+ heavy ion irradiation

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Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation