Sputtering Yields of Single Crystals Bombarded by 1- to 10-keV Ar+ Ions

Abstract

The sputtering yield S, in atoms/ion, has been measured for Cu and Ag single crystals bombarded at. normal incidence by 1-to lO-keV Ar+ ions. Yields of the three low-index planes (110), (100), and (111) for Cu and Ag crystals were measured as well as that of a Cu (311) plane. In addition a yield curve of a Cu (100) crystal bombarded in a [111J direction was measured. The yields were obtained by a weight loss method using ion beam techniques. The yields are strongly dependent on crystalline orientation showing a steep rise with energy, a maximum, which appears at an energy depending on the plane being bombarded, and a slow decrease with ion energy above the maximum. A simple theory is presented which accounts reasonably well for the energy dependence of the sputtering yield in terms of crystalline opacity and the momentum of the incident ion.

Biaxially Textured IBAD-MgO Templates for YBCO-Coated Conductors

“…Sputter experiments using Cu and Ag single crystals for 1-10-keV Ar ions impacting within a few degrees of the three low-index planes found that the sputter yields progress from lowest to highest for the [110], [100], and [111] directions, respectively. 6 These sputter yield versus crystalline orientation results agreed with the predicted range variations for the fcc lattices, in that the probability of atoms being sputtered from a material is greater if the collisions between the incident ions and the atoms of the solid occur nearer to its surface.…”

Cluster formation in sputtering: A molecular dynamics study using the MD/MC-corrected effective medium potential

“…Table I depicts the total sputtering yield Y tot produced by the simulations in comparison with corresponding experimental data. 39 It is seen that both the magnitude as well as the bombarding energy dependence of Y tot are well reproduced, a finding which may provide a first quality check of the interaction potential used.…”

Correlating discrete orientation and grain size to the sputter deposition properties of tantalum

“…Similarly, for a constant grain size, a change in crystallographic orienta- For grains having more transparent orientations, the rate determining erosion mechanism is the formation and translation of facet planes. The rate at which a given grain of low sputtering yield is eroded is inversely proportional to its area along the sputtering plane: (4) where A ϭ grain area parallel to sputtering plane and t ϭ time to consume grain.…”

“…For fcc crystals, it has been demonstrated that the sputter yield is greatest for orientations having the greatest areal atomic density, such that S (111) Ͼ S (100) Ͼ S (110) . 4,5 Applying the same rationale to bcc crystals, the relationship between sputter yield and crystal orientation is expected to vary in accordance to areal atomic density. The atomic densities of the three low index planes in tantalum (atoms per unit area) are Therefore, the sputtering yield of tantalum is expected to vary with orientation as follows:…”