Sputtering yield for Na and Cl ions on a graphene and SiC membrane in the reverse osmosis method

Abstract

Graphene is a single layer thick consisted by honeycomb‐packed sp2 carbon atom; nanoporous graphene holds great promise in the application of filtration such as reverse osmosis method using a semipermeable membrane to remove ions, molecules, and larger particles from drinking water. The movement of molecules and ions can caused by a collision between the ions, molecules, and the graphene, so we can talk about the sputtering. In this work, we have studied the sputtering yield by Na and Cl ions to examine the potential and the challenges of osmosis membrane from graphene in order to predict the performance of the graphene membrane for use in the reverse osmosis method.

Monte Carlo simulations of pure tungsten and advanced “smart” tungsten alloys under helium bombardment for future fusion power plants

“…18 Nowadays, this tool is widely used in many field such as sputtering, backscattering, damage of the target, ion range, ionization and phonon production. 31 In TRIM set-up, type of ion projectile, ion energy and angle of incidence, type of target material atoms and thickness should be defined. Thus, we studied the effects of the sputtering yield, number of vacancies and backscattering yield of targets by focused ion beams, Monte Carlo simulations code SRIM-2013 of ion impacting (He) on six candidate plasma face components (PFC) materials (W, W-Cr, W-Si, W-Cr-Si, W-Cr-Ti and W-Cr-Y), these calculations are made in two different cases, for different energy of incidence when the ion is at 60 in the energy range 0-10 KeV, and also for different angles of incidence when the ion is at 1 KeV on the (PFC) materials.…”

“…However, these simulations were made in two different cases, when the ion are at the angle of incidence 60 on the substrate surface, and also for different angles of incidence. As well as the total number of primary ion impacting on each layer in the simulation was 99,999 31 in order to obtain better statistical values and to avoid higher fluctuations, because the physical events as a function of ion numbers exhibit larger fluctuations when the total number of ions is lower. 39 Using modes to calculate the sputtering yields, number of vacancies and backscattering yields, such as the mode "Monolayer Collision Steps/ Surface Sputtering" was selected to calculate the sputtering yield, while the mode "Detailed Calculation with full Damage Cascades" was selected to calculate the backscattering yield and number of vacancies in the TRIM setup.…”

“…If their kinetic energies are high enough to overcome the surface potential barrier, they can leave the surface and influx to the fusion plasma. [23][24][25][26][27][28][29][30][31][32][33] Here, we aim to study the behavior of the sputtering yields, number of vacancies and backscattering yields of six candidate plasma face components (PFC) materials; pure tungsten (W), binary alloys (W-Cr, W-Si), and ternary alloys (W-Cr-Si, W-Cr-Ti, W-Cr-Y) as a function of the beam primary ion energy and incidence angle by He þ ion bombardment by using Monte Carlo SRIM-2013 program. The result are particularly important for estimating the lifetime of plasma face component (PFC) and analysing the extent of impurity contamination, especially with a high plasma current fusion reactor.…”

Monte Carlo simulations of noble gas ion beam sputtering yield of MgO, CaO, SrO, and BaO with various thin coatings in AC‐PDP cells

“…This energy is usually taken to be equal to the heat of sublimation . Experimentally and theoretically, several research groups have found that sputtering yields depend on the parameters of both the incident ion beam and the material.…”