Sputtering experiments in the high energy region

Almén, O.; Bruce, G.

doi:10.1016/0029-554x(61)90027-1

Cited by 175 publications

(21 citation statements)

References 5 publications

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“…The best-known reference has been a graph by Almén and Bruce showing the yields of an incredible range of sixtyeight different 45-keV ions striking tantalum, copper, and silver targets. 6 Data for the inert gas projectiles in this graph are consistent with the widely held belief that ''the heaviest inert gas will give the highest sputtering yield.'' 7 We will show in this article that for numerous widely used targets and a 1 keV projectile energy, the highest yield is not obtained with the heaviest inert gas projectile.…”

Section: Introductionsupporting

confidence: 83%

Trends in sputter yield data in the film deposition regime

Mahan

Vantomme

2000

Phys. Rev. B

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Section: Introductionsupporting

confidence: 83%

Trends in sputter yield data in the film deposition regime

Mahan

Vantomme

2000

Phys. Rev. B

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“…In his second work [5], he carried out an experimental study on well-controlled sputtering process of metal surfaces by low energy Hg ions to investigate dependency of threshold energy of the metal surface at various angles of projection of ion. The papers reported by Almen and Bruce [6,7] provided the most influential studies in sputtering, which suggested that the sputtering yields does not increase indefinitely with the increase in ion energy but approach a maximum value after certain limit and then either remains constant or can even decrease.…”

Section: Introductionmentioning

confidence: 97%

Reconsideration of metal surface sputtering due to bombardment of high-energy argon ion particles: a molecular dynamics study

2015

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Some interesting aspects of metal surface sputtering phenomenon are numerically investigated in this work using the molecular dynamics approach. Along with that, we have carried out a critical analysis of the interaction potentials typically used for modeling. Two metallic surfaces, viz., copper, Cu(100), and nickel, Ni(100), are chosen for study that are bombarded by argon ions at various energies and angles of projection. The sputtering yield is calculated by performing molecular dynamics simulations, and the same is compared with experiments and theoretical predictions wherever possible. Furthermore, other interesting parameters like the kinetic energy, velocity, and scattering angle distribution for sputtered and incident atoms are presented and discussed. Through different case studies, the present work emphasizes on the importance of interaction model used for metal surface modeling for a realistic numerical reproduction of the complex metal surface sputtering process.

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“…While in the initial state the ions enter deep into the undisturbed lattice, they are slowed down and reflected by lattice defects and implanted gas atoms if the target previously has been bombarded so that the penetration depth will be reduced [8]. The saturation is reached, when the number of ions penetrating the target is equal to that of the reflected and sputtered bombarding gas particles [9]. A saturated target, which is necessary for stationary sputtering conditions will be reached, if a layer whose thickness corresponds to one penetration depth is removed.…”

Section: Discussionmentioning

confidence: 98%