Trends in sputter yield data in the film deposition regime

Mahan, John E.; Vantomme, André

doi:10.1103/physrevb.61.8516

Cited by 24 publications

(14 citation statements)

References 11 publications

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“…However, we did not find the peaks of t-BiVO 4 for the For our molybdenum-doped BiVO 4 films, the concentration of Mo is about 10 at% relative to V, as determined by RBS. This concentration gave the highest photocurrents for the Mo-doped BiVO 4 samples studied by Park et al 21 No Mo-related XRD peaks were observed, suggesting that Mo does not segregate out of the BiVO 4 lattice even for a concentration of 10 at% Mo. However, the possibility of small amounts of amorphous or nanocrystalline MoO x phases cannot be excluded.…”

Section: Structure and Compositionmentioning

confidence: 82%

BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

et al. 2016

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Photoactive bismuth vanadate (BiVO4) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO4 films were investigated. Phase-pure monoclinic BiVO4 films, which are more photoactive than the tetragonal BiVO4 phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO4 films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO4 film thickness, the photocurrent densities (without a catalyst or a blocking layer or a hole scavenger) exceeded 1.2 mA/cm2 at a potential of 1.23 VRHE under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO4 films opens new possibilities for the fabrication of large-scale devices for water splitting.

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Section: Structure and Compositionmentioning

confidence: 82%

BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

et al. 2016

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“…[50][51][52][53][54][55][56] As mentioned earlier, ion energy and angle of incidence are the same for both in situ and ex situ plasma treatments and, hence, will not affect the sputter yield. The sputtering yield is inversely proportional to binding energy and mass ratio.…”

Section: Difference Between the In Situ And Ex Situ Plasma Treatmmentioning

confidence: 99%

“…The sputtering yield is inversely proportional to binding energy and mass ratio. [50][51][52][53][54][55][56] From the Ti 2 p XPS spectra, it is found that TiO 2 has a higher binding energy than TiN. For any given energy distribution of ions bombarding the substrate surface during plasma treatment, the bombarding ions should break more TiuN bonds than TiuO bonds, i.e., more Ti atoms would be sputtered from the TiN surface ͑in situ sample͒ than the TiO 2 surface ͑ex situ sample͒.…”

Section: Difference Between the In Situ And Ex Situ Plasma Treatmmentioning

confidence: 99%

Comparison of in situ and ex situ plasma-treated metalorganic chemical vapor deposition titanium nitride thin films

Lim

Park

See³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inRemote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor J. Vac. Sci. Technol. A 22, 8 (2004); 10.1116/1.1624285 Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride filmsIn situ physical vapor deposition of ionized Ti and TiN thin films using hollow cathode magnetron plasma source Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane Titanium nitride ͑TiN͒ thin films deposited by metalorganic chemical vapor deposition, using tetrakis-dimethyl-amino-titanium as a precursor, are known to have high sheet resistivity. A plasma treatment in forming gas ambient is one way of reducing the high sheet resistivity down to that of the films deposited by physical vapor deposition. This plasma treatment is normally done in situ ͑without breaking the vacuum͒ immediately after deposition. However, an ex situ ͑breaking vacuum after deposition͒ plasma treatment will provide a more economical way of manufacturing in which less time is required in the chemical vapor deposition chamber, hence allowing high deposition throughput. Furthermore, the plasma treatment can be done in a high-pressure chamber, which translates into low cost. In this study, we compared film properties of TiN with in situ and ex situ plasma treatments. Analyses were performed on chemical composition, sheet resistance, amount of Ti atoms, via resistance and reliability using x-ray photoelectron spectroscopy, four-point probe, x-ray fluorescence, and a current-voltage multiprobe. The ex situ plasma treatment was capable of removing carbon from the TiN film, but not without a sacrifice of the reliability and electrical performance of the TiN film. Further development on the ex situ plasma treatment must be made to improve the reliability and electrical performance of the TiN film.

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“…At energy range near the threshold energy, the sputtering yields measured in experiment are often inconsistency and poor reproducibility, hence resulting in the lack of understanding for the microscopic mechanisms of low-energy sputtering. 23 From the viewpoints of atomic collisions, the low-energy sputtering involves in the first few layers in the substrates. The motions of projectiles and recoils should be related to the atomic mass ratio of projectile to target atoms and the sputtering mechanisms might be different for the cases of M 1 < M 2 and M 1 ≥ M 2 .…”

Section: Introductionmentioning

confidence: 99%

Study on low-energy sputtering near the threshold energy by molecular dynamics simulations

Chen

Zhang

2012

AIP Advances

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Using molecular dynamics simulation, we have studied the low-energy sputtering at the energies near the sputtering threshold. Different projectile-target combinations of noble metal atoms (Cu, Ag, Au, Ni, Pd, and Pt) are simulated in the range of incident energy from 0.1 to 200 eV. It is found that the threshold energies for sputtering are different for the cases of M1 < M2 and M1 ≥ M2, where M1 and M2 are atomic mass of projectile and target atoms, respectively. The sputtering yields are found to have a linear dependence on the reduced incident energy, but the dependence behaviors are different for the both cases. The two new formulas are suggested to describe the energy dependences of the both cases by fitting the simulation results with the determined threshold energies. With the study on the energy dependences of sticking probabilities and traces of the projectiles and recoils, we propose two different mechanisms to describe the sputtering behavior of low-energy atoms near the threshold energy for the cases of M1 < M2 and M1 ≥ M2, respectively.

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Trends in sputter yield data in the film deposition regime

Cited by 24 publications

References 11 publications

BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

BiVO4 photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

Comparison of in situ and ex situ plasma-treated metalorganic chemical vapor deposition titanium nitride thin films

Study on low-energy sputtering near the threshold energy by molecular dynamics simulations

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