Sputtered Zn(O,S)/In<sub>2</sub>O<sub>3</sub>:H window layers for enhanced blue response of chalcopyrite solar cells

Steigert, Alexander; Lauermann, Iver; Niesen, T. P.; Dalibor, Thomas; Palm, J.; Körner, Stefan; Scherg-Kurmes, Harald; Muydinov, Ruslan; Szyszka, Bernd

doi:10.1002/pssr.201510318

Cited by 10 publications

(11 citation statements)

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“…We have, however, made some curious observations in our experiments, which cannot be easily explained. Thus, the In 2 O 3 :H 2 O films (state II in the Table 1) grow predominantly X-ray crystalline on such substrates like molybdenum-films, i -ZnO, Si-wafer, or CIGS-absorber [11]. Moreover, if any additional oxygen is injected into the sputtering gas, the films becomew crystalline and resistive.…”

Section: Resultsmentioning

confidence: 99%

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Crystallisation Phenomena of In2O3:H Films

et al. 2019

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The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O•• and (OH−)O• point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.

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Section: Resultsmentioning

confidence: 99%

“…Our recent studies revealed the effect of oxygen addition to the sputter-gas on the In 2 O 3 :H crystallisation progress [11]. However, the question of whether we deal with so-called plasma damage still remains.…”

Section: Introductionmentioning

confidence: 99%

Crystallisation Phenomena of In2O3:H Films

et al. 2019

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“…(1) to achieve higher conductivities while circumventing this trade-off between transparency and conductivity. Compared to ITO, the l of hydrogenated indium oxide (IO:H) films is greater by a factor of 3-4, 6,7 allowing improved nIR transparency without decreasing r. This allows for high performance in a wide range of photovoltaic a) devices, such as Cu(In,Ga)Se 2 solar cells, [8][9][10] perovskite solar cells, 11,12 and SHJ solar cells. 5,[13][14][15] However, the root cause of improved l in IO:H is not fully understood and thus motivates this current study.…”

Section: Introductionmentioning

confidence: 99%

Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

Husein

Stückelberger

West

et al. 2018

Journal of Applied Physics

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Hydrogen-doped indium oxide (IO:H) has recently garnered attention as a high-performance transparent conducting oxide (TCO) and has been incorporated into a wide array of photovoltaic devices due to its high electron mobility (>100 cm2/V s) and transparency (>90% in the visible range). Here, we demonstrate IO:H thin-films deposited by sputtering with mobilities in the wide range of 10–100 cm2/V s and carrier densities of 4 × 1018 cm–3–4.5 × 1020 cm–3 with a large range of hydrogen incorporation. We use the temperature-dependent Hall mobility from 5 to 300 K to determine the limiting electron scattering mechanisms for each film and identify the temperature ranges over which these remain significant. We find that at high hydrogen concentrations, the grain size is reduced, causing the onset of grain boundary scattering. At lower hydrogen concentrations, a combination of ionized impurity and polar optical phonon scattering limits mobility. We find that the influence of ionized impurity scattering is reduced with the increasing hydrogen content, allowing a maximization of mobility >100 cm2/V s at moderate hydrogen incorporation amounts prior to the onset of grain boundary scattering. By investigating the parameter space of the hydrogen content, temperature, and grain size, we define the three distinct regions in which the grain boundary, ionized impurity, and polar optical phonon scattering operate in this high mobility TCO.

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“…Due to the greatly-reduced IR-losses in such TCOs, they have found direct application in various solar cell devices, mainly leading to increased short-circuit current densities Jsc when compared to conventional ITO. For example, these high-mobility TCOs have played a key role in achieving the record conversion efficiencies for silicon heterojunction (SHJ) solar cells 8,9 , and are also being explored for CIGS [10][11][12] and perovskite tandem cells. 13,14,15 Among these high-mobility TCOs, In2O3:H is capable of achieving the highest mobility with values even up to 138 cm 2 /Vs.…”

Section: Introductionmentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTHydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 o C, followed by a solid phase crystallization step at 150-200 o C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The

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Sputtered Zn(O,S)/In₂O₃:H window layers for enhanced blue response of chalcopyrite solar cells

Cited by 10 publications

References 9 publications

Crystallisation Phenomena of In2O3:H Films

Crystallisation Phenomena of In2O3:H Films

Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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Sputtered Zn(O,S)/In2O3:H window layers for enhanced blue response of chalcopyrite solar cells

Cited by 10 publications

References 9 publications

Crystallisation Phenomena of In2O3:H Films

Crystallisation Phenomena of In2O3:H Films

Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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Sputtered Zn(O,S)/In₂O₃:H window layers for enhanced blue response of chalcopyrite solar cells