Sputtered silver and Cr—C films for applications as interconnect materials

MOCVD of Cr[sub 3](C,N)[sub 2] and CrSi[sub x]C[sub y] Films

“…Thus, the first conducting materials that were studied as barriers are compounds with a high melting point such as ͑i͒ refractory metals, [11][12][13] ͑ii͒ their alloys, 14 and ͑iii͒ the transition metal nitrides. 31 Despite the limitation of PVD in high aspect ratio contacts, these Cr-based layers were deposited by this line-of-sight process. Because of their great similarity with the nitrides, carbides [20][21][22][23] and borides 24 of the same transition metals were also considered.…”

“…The chromium carbide Cr 3 C 2 also deposited by PVD was tested as interconnect material. 31 Despite the limitation of PVD in high aspect ratio contacts, these Cr-based layers were deposited by this line-of-sight process.…”